Semiconductor device, power converter, method for manufacturing semiconductor device, and method for manufacturing power converter
There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 μm or less. The circuit surface and the external terminal are each made of copper or copper alloy.
1. A semiconductor device comprising:
a case including a side wall;
an insulating substrate disposed in an opening in the case defined by the side wall and provided at least on its upper surface with a circuit surface;
a semiconductor element disposed on an upper surface of the circuit surface via a bonding material; and
an external terminal bonded to the upper surface of the circuit surface, the external terminal having a portion extending into the side wall,
wherein
the upper surface of the circuit surface is in contact with and bonded to a part of a lower surface of the external terminal,
in at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed,
a gap between the upper surface of the circuit surface and the lower surface of the external terminal at a tip of the external terminal has a size of 20 μm or less and greater than 0, and the gap begins at a point from the tip of the external terminal and increases in a direction toward the tip of the external terminal, and
the circuit surface and the external terminal are each made of copper or copper alloy.
2. The semiconductor device according to claim 1 , wherein a plurality of the melted portions is formed.
3. A semiconductor device comprising:
a case;
an insulating substrate disposed in the case and provided at least on its upper surface with a circuit surface;
a semiconductor element disposed on an upper surface of the circuit surface via a bonding material; and
an external terminal bonded to the upper surface of the circuit surface,
wherein
the upper surface of the circuit surface is in contact with and bonded to a part of a lower surface of the external terminal,
in at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed,
a gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 μm or less, and
the circuit surface and the external terminal are each made of copper or copper alloy,
the semiconductor device further comprising a sealing material injected in the case to cover the insulating substrate, the semiconductor element, and a part of the external terminal.
4. The semiconductor device according to claim 3 , further comprising a heat sink connected to a lower surface of the insulating substrate via a bonding material,
wherein a lower surface of the heat sink is exposed from the sealing material.