IP Library › Granted Patent US 11,691,216
Granted Patent B2
US 11,691,216 · App. 16/445,194 · Granted Jul 4, 2023

Apparatus for materials processing

Inventors: Joseph Ting (Acton, MA); Charles Holland Dresser (Wayland, MA); Jayant Bhawalkar (Auburndale, MA)
Assignee: Avava, Inc.
B23K26/064B23K26/032B23K26/062B23K2103/50
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,691,216
App. No.
16/445,194
Granted
Jul 4, 2023
Kind
B2
Abstract

A method includes depositing a plurality of dopant particles within a predetermined region of a transparent material. The method also includes focusing a laser beam along an optical axis to a focal region that overlaps with at least a portion of the predetermined region. The focal region can irradiate at least a first dopant particle of the plurality of dopant particles. The method further includes adjusting a parameter of the laser beam to generate a plasma configured to form an inclusion within the transparent material. The method additionally includes scanning the focal region along a path within the transparent material to elongate the inclusion generally along the path.

Claims (31)

1. A method comprising:

depositing a plurality of dopant particles within a predetermined region of a transparent material;

focusing a laser beam along an optical axis to a focal region that overlaps with at least a portion of the predetermined region, wherein the focal region irradiates at least a first dopant particle of the plurality of dopant particles for a pulse duration within a range of 0.1 nanoseconds to 100 nanoseconds, which is sufficient to allow heat diffusion while selectively generating thermionic plasma within the predetermined region;

adjusting a parameter of the laser beam to generate a plasma configured to form an inclusion within the transparent material; and,

scanning the focal region along a path within the transparent material to elongate the inclusion generally along the path;

wherein the inclusion comprises a sub-surface microfluidic channel.

2. The method of claim 1 , wherein the inclusion has a transverse height substantially along the optical axis and a transverse width orthogonal to the transverse height and the path.

3. The method of claim 2 , wherein the inclusion has an aspect ratio equal to the transverse height divided by the transverse width, and wherein the aspect ratio is within a range from about 0.05 to about 500.

4. The method of claim 2 , wherein at least one of the transverse height and the transverse width is within a range from about 0.5 μm to about 500 μm, and wherein the inclusion comprises a void configured to provide fluidic communication.

5. The method of claim 2 , wherein at least one of the transverse height and the transverse width has a value within a range from about 0.05 μm to about 5000 μm.

6. The method of claim 2 , wherein the inclusion comprises a localized change in the physical, mechanical, or optical properties of the material.

7. The method of claim 2 , wherein the inclusion comprises a void configured to conduct fluid, electrical energy, or thermal energy.

8. The method of claim 1 , wherein the path comprises a component vector that is substantially parallel to the optical axis.

9. The method of claim 1 , wherein the path comprises 3 orthogonal component vectors.

10. The method of claim 1 , wherein the plasma is generated within the first dopant particle.

11. The method of claim 1 , wherein the plasma is generated via laser induced thermal breakdown (LITB).

12. The method of claim 1 , wherein the plasma is generated via laser induced optical breakdown (LIOB).

13. The method of claim 1 , wherein adjusting the parameter of the laser beam comprises adjusting at least one of a power, a pulse energy, a repetition rate, a pulse duration, and a wavelength of the laser beam.

14. The method of claim 1 , wherein the plurality of dopant particles include at least one of silicon, silver nanoparticles, metal nanocomposites, dendritic molecules, chromophores, and metal oxide nanoparticles.

15. The method of claim 1 , wherein the transparent material comprises at least one of: a polymer, a glass, and a crystal.

16. The method of claim 1 , further comprising introducing a fluid into the inclusion, wherein the fluid is configured to remove material from walls of the inclusion.

17. The method of claim 16 , wherein the fluid comprises at least one of: a liquid, a gas, a solvent, and an abrasive.

18. The method of claim 1 , further comprising introducing a vacuum to the inclusion.

19. The method of claim 1 , further comprising heating the transparent material to a predetermined temperature.

20. A system comprising:

a focus optic configured to focus a laser beam along an optical axis to a focal region that overlaps with at least a portion of a predetermined region of a transparent material that is deposited with a plurality of dopant particles, wherein the focal region irradiates at least a first dopant particle of the plurality of dopant particles for a pulse duration within a range of 0.1 nanoseconds to 100 nanoseconds, which is sufficient to allow heat diffusion while selectively generating thermionic plasma within the predetermined region;

a controller configured to adjust at least one of a power, a pulse energy, a repetition rate, a pulse duration, and a wavelength of the laser beam to generate plasma in order to form an inclusion within the transparent material, wherein the inclusion comprises a sub-surface microfluidic channel; and,

a scanner configured to scan the focal region along a path within the transparent material to elongate the inclusion generally along the path.

21. The method of claim 1 , wherein the sub-surface microfluidic channel has a depth that changes with location.

22. The method of claim 1 , wherein an intensity of the laser beam is 10 10 W/cm 2 , which is below a threshold of avalanche ionization.

23. The system of claim 20 , wherein an intensity of the laser beam is 10 10 W/cm 2 , which is below a threshold of avalanche ionization.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2024
From: AVAVA, INC.
To: ANKURA TRUST COMPANY, LLC
Reel/Frame 066181/0390 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 13, 2019
From: BHAWALKAR, JAYANT; DRESSER, CHARLES HOLLAND; TING, JOSEPH
To: AVAVA, INC.
Reel/Frame 050034/0986 →
Continuity (2)
Provisional Application 62688848 · Jun 22, 2018
Related Publication 20190389000A1 · Dec 26, 2019