Semiconductor controlled quantum interaction gates
Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.
1. A quantum interaction gate, comprising:
a substrate;
a first qubit, including:
a first substantially continuous well constructed on said substrate;
a first control gate constructed over said first well separating said first well into a first quantum dot and a second quantum dot;
wherein a first potential applied to said first control gate is operative to control a first local depleted tunneling path connecting said first quantum dot and said second quantum dot;
a second qubit, comprising:
a second substantially continuous well constructed on said substrate;
a second control gate constructed over said second well separating said second well into a third quantum dot and a fourth quantum dot;
wherein a second potential applied to said second control gate is operative to control a second local depleted tunneling path connecting said third quantum dot and said fourth quantum dot; and
wherein said first quantum dot and said third quantum dot are in sufficient proximity to each other to enable interaction between a first particle and a second particle respectively therein.
2. The quantum interaction gate according to claim 1 , wherein said interaction is electrostatic.
3. The quantum interaction gate according to claim 1 , wherein said first particle and said second particle comprise electrons.
4. The quantum interaction gate according to claim 1 , further comprising one or more additional control gates constructed over said first well thereby separating said first well into one or more additional qdots.
5. The quantum interaction gate according to claim 1 , wherein said first control gate and said second control gate control movement of said first particle and said second particle within their respective qubit quantum interaction gates.
6. The quantum interaction gate according to claim 1 , wherein said first and second particles are injected into said second qdot and said fourth qdot that are located sufficiently far away from each other resulting in sufficiently low interaction therebetween.
7. The quantum interaction gate according to claim 1 , wherein a duration of said interaction between said first qdot and said third qdot determines a quantum operation performed by said first qubit and said second qubit.
8. The quantum interaction gate according to claim 1 , wherein said interaction is reduced or stops when said first particle moves sufficiently far enough away from said second particle.
9. The quantum interaction gate according to claim 1 , wherein subsequent to interaction, said first and second particles are moved away from each other.
10. The quantum interaction gate according to claim 1 , wherein said first qubit and said second qubit are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through an oxide layer, a planar quantum structure using tunneling through a local depleted well, a 3D quantum structure using tunneling through an oxide layer, and a 3D quantum structure using tunneling through a local depleted fin.
11. The quantum interaction gate according to claim 1 , wherein said first qubit and said second qubit are configured to provide operation selected from a group consisting of: controlled NOT gate, controlled-controlled NOT, Tofolli gate, quantum annealing interaction gate, controlled quantum SWAP interaction gate, controlled Pauli interaction gate, quantum ancilla interaction gate.
12. A quantum interaction gate, comprising:
a substrate;
a depleted layer fabricated on said substrate;
a first qudit having one or more control gates fabricated on said depleted layer to form a first plurality of qdots including one interaction qdot;
a second qudit having one or more control gates fabricated on said depleted layer to form a second plurality of qdots including one interaction qdot; and
wherein said interaction qdots of said first and second qudits are located closer to each other compared to all other first and second plurality of qdots so as to enable interaction between particles located therein.
13. The quantum interaction gate according to claim 12 , further comprising a circuit operative to inject said particles into initialization qdots of said first qudit and said second qudit that are located sufficiently far away from each other to substantially prevent interaction therebetween.
14. The quantum interaction gate according to claim 12 , wherein appropriate control signals are applied to said first qudit and said second qudit to move said particles to said interaction qdots.
15. The quantum interaction gate according to claim 12 , wherein a duration of said interaction determines the particular quantum operation performed by said first qudit and said second qudit.
16. The quantum interaction gate according to claim 12 , wherein subsequent to interaction, at least one of said particles is moved away from said interaction qdots thereby reducing or stopping said interaction.
17. The quantum interaction gate according to claim 12 , wherein said first qudit and said second qudit are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through an oxide layer, a planar quantum structure using tunneling through a local depleted well, a 3D quantum structure using tunneling through an oxide layer, and a 3D quantum structure using tunneling through a local depleted fin.
18. The quantum interaction gate according to claim 12 , wherein said first qudit and said second qudit are configured to provide operation selected from a group consisting of: controlled NOT gate, controlled-controlled NOT, Tofolli gate, quantum annealing interaction gate, controlled quantum SWAP interaction gate, controlled Pauli interaction gate, quantum ancilla interaction gate.
19. The quantum interaction gate according to claim 12 , further comprising a circuit operative to inject a first particle into an initialization qdot within said first qudit and a second particle into an initialization qdot within said second qudit wherein a distance between said initialization qdots are sufficiently far apart resulting in sufficiently low interaction between said first particle and said second particle.
20. A quantum interaction gate, comprising:
a substrate;
a depleted well fabricated on said substrate;
a plurality of qudits, each qudit including one or more control gates fabricated on said depleted well to form a plurality of qdots including one interaction qdot, wherein each control gate functions to form a qdot on either side thereof for holding a quantum state of at least one particle; and
wherein said one interaction qdot in at least two qudits are located closer to each other compared to a remaining plurality of qdots so as to enable quantum interaction between particles located in said one interaction qdot in at least two qudits.
21. A method of quantum interaction, comprising:
providing a substrate;
fabricating a depleted layer over said substrate;
fabricating on said depleted layer a first qudit having a first plurality of qdots and associated control gates including an interaction qdot;
fabricating on said depleted layer a second qudit having a second plurality of qdots and associated control gates including an interaction qdot;
wherein each qdot of said first plurality of qdots is formed on a side of an associated control gate in said first qudit and each qdot of said second plurality of qdots is formed on a side of an associated control gate in said second qudit; and
wherein said interaction qdots are located sufficiently closer to each other compared to all other qdots in said first and second qudits so as to enable interaction between two particles located therein.
22. The method according to claim 21 , further comprising injecting a first particle into an initialization qdot within said first qudit and a second particle into an initialization qdot within said second qudit wherein a distance between said initialization qdots are sufficiently far apart resulting in sufficiently low interaction between said first particle and said second particle.
23. The method according to claim 22 , further comprising transporting said first particle and/or said second particle through one or more staging qdots in said respective first qudit and said second qudit to said respective interaction qdots to permit relatively strong quantum interaction therebetween.
24. The method according to claim 23 , further comprising transporting, after quantum interaction is complete, said first particle and said second particle away from each other through said one or more staging qdots to a relatively larger distance to prevent further interaction therebetween.
25. The method according to claim 21 , wherein said first qudit and said second qudit are fabricated using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through an oxide layer, a planar quantum structure using tunneling through a local depleted well, a 3D quantum structure using tunneling through an oxide layer, and a 3D quantum structure using tunneling through a local depleted fin.
26. The method according to claim 21 , wherein said first qudit and said second qudit are configured to provide operation selected from a group consisting of: controlled NOT gate, controlled-controlled NOT, Tofolli gate, quantum annealing interaction gate, controlled quantum SWAP interaction gate, controlled Pauli interaction gate, quantum ancilla interaction gate.