High bias deposition of high quality gapfill
Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high quality gapfill. Some embodiments utilize chemical vapor deposition, plasma vapor deposition, physical vapor deposition and combinations thereof to deposit the gapfill. The gapfill is of high quality and similar in properties to similarly composed bulk materials.
1. A gapfill deposition method comprising:
flowing a gapfill precursor into a processing volume of a processing chamber, the gapfill precursor flowed from a gas distribution assembly spaced above a substrate positioned on an electrostatic chuck within the processing volume, the substrate having a substrate surface comprising at least one feature therein, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having an opening width at the substrate surface defined by a first sidewall and a second sidewall, the processing volume maintained at a pressure between about 0.5 mTorr and about 10 Torr; and
generating a plasma in the processing volume above the substrate by applying a first RF bias and a second RF bias to the electrostatic chuck to deposit a gapfill within the at least one feature of the substrate, the gapfill comprising substantially no voids.
2. The method of claim 1 , wherein the gapfill precursor comprises a hydrocarbon and the gapfill comprises a diamond-like carbon material.
3. The method of claim 2 , wherein the diamond-like carbon material has a density greater than 1.8 g/cm3.
4. The method of claim 2 , wherein the diamond-like carbon material has a stress in a range of about −600 MPa to about −300 MPa.
5. The method of claim 2 , wherein the hydrocarbon is selected from a group consisting of: C 2 H 2 , C 3 H 6 , CH 4 , C 4 H 8 , 1,3-dimethyladamantane, bicyclo[2.2.1]hepta-2,5-diene (2,5-norbornadiene), adamantine (C 10 H 16 ), norbornene (C 7 H 10 ), and combinations thereof.
6. The method of claim 1 , wherein the gapfill precursor comprises a silicon-containing species and the gapfill comprises a dielectric material.
7. The method of claim 6 , wherein the dielectric material comprises one or more of silicon, silicon oxide or silicon nitride.
8. The method of claim 1 , wherein the first RF bias is provided at a power between about 10 Watts and about 3000 Watts at a frequency of from about 350 kHz to about 100 MHz.
9. The method of claim 1 , wherein the second RF bias is provided at a power between about 10 Watts and about 3000 Watts at a frequency of from about 350 kHz to about 100 MHz.
10. The method of claim 1 , wherein the substrate is maintained at a temperature from about 10° C. to about 100° C.
11. The method of claim 1 , wherein the gapfill precursor comprises a dilution gas comprising one or more of He, Ar, Xe, N2, H2, or combinations thereof.
12. The method of claim 1 , wherein the at least one feature has a ratio of the depth to the opening width of greater than or equal to about 10:1.
13. The method of claim 1 , wherein spacing between the gas distribution assembly and the substrate is maintained at 1,000 to 15,000 mils.
14. A gapfill deposition method comprising:
flowing a gapfill precursor into a processing volume of a processing chamber, the processing volume containing a substrate positioned over a first electrode and having a substrate surface comprising at least one feature therein, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having an opening width at the substrate surface defined by a first sidewall and a second sidewall, the processing chamber further comprising a second electrode positioned above the first electrode and the substrate, the second electrode having a surface comprising a secondary electrode emission material comprising one or more of a silicon-containing material or a carbon-containing material;
applying a first RF power to at least one of the first electrode and the second electrode; and
forming a gapfill within the at least one feature of the substrate, the gapfill comprising substantially no voids.
15. The method of claim 14 , wherein the gapfill precursor comprises a hydrocarbon selected from the group consisting of: C 2 H 2 , C 3 H 6 , CH 4 , C 4 H 8 , 1,3-dimethyladamantane, bicyclo[2.2.1]hepta-2,5-diene (2,5-norbornadiene), adamantine (C 10 H 16 ), norbornene (C 7 H 10 ), and combinations thereof and the gapfill comprises a diamond-like carbon material.
16. The method of claim 15 , wherein the diamond-like carbon material has a density greater than 1.5 g/cm 3 and a stress in a range of about −600 MPa to about 100 MPa.
17. The method of claim 14 , wherein the gapfill precursor comprises a silicon-containing species and the gapfill comprises a dielectric material comprising one or more of silicon, silicon oxide or silicon nitride.
18. The method of claim 14 , wherein the at least one feature has a ratio of the depth to the opening width of greater than or equal to about 10:1.