Technologies for preserving error correction capability in compute-in-memory operations
Technologies for preserving error correction capability in compute-in-memory operations in a memory include memory media and a media access circuitry coupled with the memory media. The media access circuitry is to detect an error code adjustment state indicative of a failure in the initiated error correction. The media access circuitry is to adjust a voltage to the memory media to eliminate the error code correction adjustment state. Once eliminated, the media access circuitry is to perform the error correction on the read data.
1. A memory device comprising:
a memory media to set a reference voltage from a reference voltage value, the reference voltage used to read data from the memory media; and
media access circuitry local to the memory media, the media access circuitry including:
an error correction code (ECC) logic unit to correct the data read from the memory media to produce an error-corrected read data,
a logic unit to perform a compute-in-memory operation on the error-corrected read data, and
a feedback circuitry to:
maintain an ECC adjustment state to indicate whether the data read from the memory media is correctable by the ECC logic unit, and
control operation of the logic unit based on the ECC adjustment state, including to:
pause operation of the logic unit if the data read from the memory media is not correctable by the ECC logic unit, and
resume operation of the logic unit if the data read from the memory media is correctable by the ECC logic unit.
2. A memory device as in claim 1 , wherein the data read from the memory media is:
not correctable if a number of error bits in the data exceeds a threshold number of error bits; and
correctable if the number of error bits in the data is within the threshold number of error bits.
3. A memory device as in claim 2 , wherein to maintain the ECC adjustment state, the feedback circuitry is to:
receive an indication from the ECC logic unit that error correction of the data read from the memory media was unsuccessful;
set the ECC adjustment state to indicate the data read from the memory media is not correctable by the ECC logic unit; and
trigger elimination of the ECC adjustment state using the reference voltage value.
4. A memory device as in claim 3 , wherein to trigger elimination of the ECC adjustment state using the reference voltage value, the feedback circuitry is to:
determine that the number of error bits in the data exceeds the threshold number of error bits;
determine a new reference voltage value to reduce the number of error bits in the data read from the memory media to within the threshold number of error bits as a function of the reference voltage set by the memory media;
transmit the new reference voltage value to the memory media, the new reference voltage value to cause the memory media to adjust the reference voltage set by the memory media; and
responsive to the memory media having successfully adjusted the reference voltage set by the memory media with the new reference voltage value, eliminate the ECC adjustment state to indicate the data read from the memory media is correctable by the ECC logic unit.
5. A memory device as in claim 4 , wherein to transmit the new reference voltage value to the memory media, the feedback circuitry is to transmit to the memory media any of a signal or a message indicative of the new reference voltage value.
6. A memory device as in claim 1 , wherein the media access circuitry local to the memory media includes media access circuitry disposed on any of a same die and a same package.
7. A memory device as in claim 1 , wherein the media access circuitry local to the memory media includes media access circuitry disposed on any of a separate die and a separate package, and further disposed on any of a same dual inline memory module (DIMM) and same board as the memory media.
8. An apparatus comprising:
media access circuitry local to a memory media, the media access circuitry to access data read from the memory media using a reference voltage set from a reference voltage value, the media access circuitry including:
an error correction code (ECC) logic unit to correct the data read from the memory media to produce an error-corrected read data,
a logic unit to perform a compute-in-memory operation on the error-corrected read data, and
a feedback circuitry to:
maintain an ECC adjustment state to indicate whether the data read from the memory media is correctable by the ECC logic unit, and
control operation of the logic unit based on the ECC adjustment state, including to:
pause operation of the logic unit if the data read from the memory media is not correctable by the ECC logic unit, and
resume operation of the logic unit if the data read from the memory media is correctable by the ECC logic unit.
9. An apparatus as in claim 8 , wherein the data read from the memory media is:
not correctable if a number of error bits in the data exceeds a threshold number of error bits; and
correctable if the number of error bits in the data is within the threshold number of error bits.
10. An apparatus as in claim 9 , wherein to maintain the ECC adjustment state, the feedback circuitry is to:
receive an indication from the ECC logic unit that error correction of the data read from the memory media was unsuccessful;
set the ECC adjustment state to indicate the data read from the memory media is not correctable by the ECC logic unit; and
trigger elimination of the ECC adjustment state using the reference voltage value.
11. An apparatus as in claim 10 , wherein to trigger elimination of the ECC adjustment state using the reference voltage value, the feedback circuitry is to:
determine that the number of error bits in the data exceeds the threshold number of error bits;
determine a new reference voltage value to reduce the number of error bits in the data read from the memory media to within the threshold number of error bits as a function of the reference voltage set by the memory media;
transmit the new reference voltage value to the memory media to adjust the reference voltage set by the memory media; and
responsive to the memory media having successfully adjusted the reference voltage set by the memory media with the new reference voltage value, eliminate the ECC adjustment state to indicate the data read from the memory media is correctable by the ECC logic unit.
12. An apparatus as in claim 11 , wherein to transmit the new reference voltage value to the memory media, the feedback circuitry is to transmit to the memory media any of a signal or a message indicative of the new reference voltage value.
13. An apparatus as in claim 8 , wherein the media access circuitry local to the memory media includes media access circuitry disposed on any of a same die and a same package.
14. An apparatus as in claim 8 , wherein the media access circuitry local to the memory media includes media access circuitry disposed on any of a separate die and a separate package, and further disposed on any of a same dual inline memory module (DIMM) and a same board as the memory media.
15. A method comprising:
maintaining, in a media access circuitry for accessing data read from a memory media using a reference voltage set by the memory media from a reference voltage value, an error correction code (ECC) adjustment state machine to indicate whether the data read from the memory media is correctable by an ECC logic unit to correct the data read from the memory media to produce an error-corrected read data;
controlling operation of a logic unit in the media access circuitry based on the ECC adjustment state, the logic unit to perform a compute-in-memory operation on the error-corrected read data, wherein controlling operation of the logic unit includes:
pausing operation of the logic unit if data read from the memory media is not correctable by the ECC logic unit, and
resuming operation of the logic unit if data read from the memory media is correctable by the ECC logic unit.
16. A method as in claim 15 , wherein the data read from the memory media is:
not correctable if a number of error bits in the data exceeds a threshold number of error bits; and
correctable if the number of error bits in the data is within the threshold number of error bits.
17. A method as in claim 16 , wherein maintaining the ECC adjustment state includes:
receiving an indication from the ECC logic unit that error correction of the data read from the memory media was unsuccessful;
setting the ECC adjustment state to indicate the data read from the memory media is not correctable by the ECC logic unit; and
eliminating the ECC adjustment state using the reference voltage value.
18. A method as in claim 17 , wherein eliminating the ECC adjustment state using a reference voltage value comprises:
determining that the number of error bits in the data exceeds the threshold number of error bits;
determining a new reference voltage value to reduce the number of error bits in the data read from the memory media to within the threshold number of error bits as a function of the reference voltage set by the memory media;
transmitting the new reference voltage value to the memory media to adjust the reference voltage set by the memory media; and
responsive to the memory media having successfully adjusted the reference voltage set by the memory media with the new reference voltage value, resetting the ECC adjustment state to indicate the data read from the memory media is correctable by the ECC logic unit.
19. A method as in claim 18 , wherein transmitting the new reference voltage value to the memory media comprises transmitting to the memory media any of a signal or a message indicative of the new reference voltage value.
20. A method as in claim 15 , wherein the media access circuitry local to the memory media includes media access circuitry disposed on any of a same die and a same package.
21. A method as in claim 15 , wherein the media access circuitry local to the memory media includes media access circuitry disposed on any of a separate die and a separate package and further disposed on any of a same dual inline memory module (DIMM) and same board as the memory media.