Amorphous metal thin film transistors
Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.
1. A device, comprising:
a non-conducting substrate;
an amorphous metal gate electrode on the non-conducting substrate, the amorphous metal gate electrode including a metal alloy; and
a first insulator on the amorphous metal gate electrode;
a channel conductor on the first insulator, the channel conductor overlapping the amorphous metal gate electrode;
a second insulator on the channel conductor, the second insulator overlying opposite ends of the channel conductor;
source/drain electrodes on the second insulator, the source/drain electrodes overlapping opposite ends of hte channel conductor, and
electrical connectors in the second inusulator, the electrical connectors coupling the source/drain electrodes to the channel conductor.
2. The device of claim 1 , wherein the first insulator comprises a meal oxide or a metal nitride.
3. The device of claim 1 , wherein the source/drain electrodes comprise an amorphous metal alloy.
4. The device of claim 1 , further comprising a third insulator on a central portion of the channel conductor not covered by the second insulator.
5. The device of claim 4 , further comprising a second gate electrode on the third insulator, the second gate electrode overlying the amorphous metal gate electrode.
6. The device of claim 5 , wherein the second gate electrode comprises a crystalline metal, an amorphous metal or a multi-material stack.
7. The device of claim 1 , wherein the metal alloy is alloy of Ti and Al or an alloy of Cu, Zr and B.
8. A device, comprising:
a non-conducting substrate;
an amorphous metal source electrode on the non-conducting substrate, the amorphous metal source electrode including a first metal alloy;
an amorphous metal drain electrode on the non-conducting substrate, the amorphous metal drain electrode including a second metal alloy; and
a channel conductor on the non-conducting substrate, the channel conductor having a first portion between the amorphous metal source electrode and the amorphous metal drain electrode, and a second portion overlying the amorphous metal source electrode and the amorphous metal drain electrode,
wherein each of the first metal alloy and the second metal alloy includes an alloy of Ti and Al or an alloy of Cu, Zr and B.
9. The device of claim 8 , further including a first insulator on the amorphous metal source electrode and the amorphous metal drain electrode.
10. The device of claim 9 , further including a gate electrode on the first insulator.
11. The device of claim 10 , further including a second insulator between the non-conducting substrate and the channel conductor.
12. The device of claim 10 , wherein the gate electrode comprises an amorphous metal.
13. The device of claim 11 wherein the second insulator is between the non-conducting substrate and the amorphous metal source and amorphous metal drain electrodes.
14. The device of claim 11 wherein the first portion of the channel conductor between the non-conducting substrate and the amorphous metal source and amorphous metal drain electrodes contacts the second insulator.
15. A device, comprising:
a first insulator;
a channel conductor on a first portion of the first insulator;
source/drain electrodes overlapping opposite ends of the channel conductor, each of the source/drain electrodes including an amorphous metal alloy;
an amorphous metal interconnect on a second portion of the first insulator, the amorphous metal interconnect including the amorphous metal alloy;
a second insulator on the source/drain electrodes, the channel conductor and the amorphous metal interconnect;
a gate electrode on the second insulator; and
first and second electrodes on the amorphous metal inter connect.
16. The device of claim 15 , further comprising a substrate underlying the first insulator.
17. The device of claim 16 , wherein the substrate is a flexible substrate.
18. The device of claim 15 , wherein the gate electrode comprises a crystalline metal or an amorphous metal.
19. The device of claim 15 , wherein the gate electrode is substantially aligned with the channel conductor.
20. The device of claim 15 , wherein the gate electrode is aligned between the source/drain electrodes.
21. A display, comprising:
a plurality of pixels; and
a plurality of amorphous metal thin film transistors (AMTFTs) coupled to the plurality of pixels, at least one of AMTFT of the plurality of AMTFTs including:
an amorphous metal gate electrode including a metal alloy;
a first insulator on the amorphous metal gate electrode;
a channel conductor on the first insulator, the channel conductor overlapping the amorphous metal gate electrode;
a second insulator on a portion of the channel conductor;
another gate electrode on the second insulator;
a third insulator on the another gate electrode and the channel conductor;
source/drain electrodes on the third insulator, the source/drain electrode overlying opposite ends of the channel conductor, and
electrical connectors extending through the third insulator, the electrical connectors coupling the source/drain electrodes to the channel conductor.
22. The display of claim 21 , wherein the third insulator contacts sidewalls of the second insulator.
23. The display of claim 22 , wherein the another gate electrode is substantially aligned with the amorphous metal gate electrode.
24. The display of claim 23 , wherein the another gate electrode comprises a crystalline metal or an amorphous metal.
25. The display of claim 21 , wherein the metals selected from Zr, Cu, Ni, and Al.
26. The display of claim 20 , wherein the source/drain electrodes comprise an amorphous metal alloy.