Self-aligned cut process for self-aligned via process window

1. A method for fabricating a semiconductor device, comprising:

forming at least one sacrificial via within at least one self-aligned via hole of a base structure, wherein a pillar is present adjacent the at least one sacrificial via;

forming a region having a misalignment relative to the at least one sacrificial via by cut patterning, the misalignment of the cut patterning being an opening having a center that is offset from a center of the pillar so that a portion of the opening extends over a sidewall of the at least one sacrificial via; and

forming a cut cavity within the opening having a tapered sidewall geometry for reducing overlap of the cut cavity to the sidewall of the at least one sacrificial via.

2. The method of claim 1 , further comprising:

forming the base structure to include at least one trench by patterning a stack; and

performing self-aligned patterning and etching on the base structure to form at least one opening corresponding to the at least one trench.

3. The method of claim 2 , wherein the stack includes underlying devices, an interlayer dielectric disposed on the underlying devices, and mask material disposed on the interlayer dielectric, and wherein the at least one trench is formed by etching the mask material and the interlayer dielectric.

4. The method of claim 2 , wherein performing self-aligned patterning and etching on the base structure to form at least one opening further includes:

forming one or more layers including a first sacrificial layer; and

forming the at least one opening through the one or more layers.

5. The method of claim 4 , wherein forming one or more layers further includes forming an antireflective coating layer on the first sacrificial layer.

6. The method of claim 4 , wherein forming the at least one sacrificial via further includes:

forming the least one self-aligned via hole within the at least one opening;

removing the first sacrificial layer; and

forming a second sacrificial layer within the at least one self-aligned via hole by filling the at least one trench with sacrificial material.

7. The method of claim 6 , wherein forming the region further includes forming an antireflective coating layer along the second sacrificial layer, forming a photoresist layer on the antireflective coating layer, and forming the region within the photoresist layer to a surface of the antireflective coating layer.

8. The method of claim 1 , further comprising forming a cut pillar within the cut cavity by filling the cut cavity with a dielectric material.

9. The method of claim 8 , further comprising re-forming the at least one self-aligned via hole by removing the at least one sacrificial via, and forming conductive material to form a conductive layer and the at least one self-aligned via within the at least one self-aligned via hole.

10. The method of claim 1 , wherein the cut cavity is formed including the tapered sidewall geometry with a tapered angle ranging from about 75 degrees to about 87 degrees.

11. The method of claim 1 , wherein the cut cavity is formed by controlling a tapered angle of the cut cavity such that the tapered angle ranges from about 80 degrees to about 89 degrees.

12. A method for fabricating a semiconductor device, comprising:

performing self-aligned patterning and etching on a base structure including at least one trench, including forming a first sacrificial layer and a first antireflective coating layer and forming at least one opening corresponding to the at least one trench through the first sacrificial layer and the first antireflective coating layer;

forming at least one self-aligned via hole within the at least one opening, including removing the first antireflective coating layer;

forming at least one sacrificial via within the at least one self-aligned via hole, including removing the first sacrificial layer and forming a second sacrificial layer within the at least one self-aligned via hole by filling the at least one trench with sacrificial material;

forming a region having a misalignment relative to the at least one sacrificial via by cut patterning, including forming a second antireflective coating layer along the second sacrificial layer, forming a photoresist layer on the second antireflective coating layer, and forming the region within the photoresist layer to a surface of the second antireflective coating layer, the misalignment of the cut patterning being an opening having a center that is offset from a center of the pillar so that a portion of the opening extends over a sidewall of the at least one sacrificial via; and

forming a cut cavity within the opening having a tapered sidewall geometry for reducing overlap of the cut cavity to the sidewall of the at least one sacrificial via minimizing effects of the misalignment by protecting at least one self aligned via.

13. The method of claim 12 , further comprising forming the base structure to include the at least one trench by patterning a stack including underlying devices, an interlayer dielectric disposed on the underlying devices, and mask material disposed on the interlayer dielectric, wherein the at least one trench is formed by etching the mask material and the interlayer dielectric.

14. The method of claim 12 , further comprising:

forming a cut pillar within the cut cavity by filling the cut cavity with a dielectric material;

re-forming the at least one self-aligned via hole by removing the at least one sacrificial via; and

forming conductive material to form a conductive layer and the at least one self-aligned via within the at least one self-aligned via hole.

15. The method of claim 12 , wherein the cut cavity is formed including the tapered sidewall geometry with a tapered angle ranging from about 75 degrees to about 87 degrees.

16. The method of claim 12 , wherein the cut cavity is formed by controlling a tapered angle of the cut cavity such that the tapered angle ranges from about 80 degrees to about 89 degrees.