Output driving circuit
The output driving circuit include a pull-down driver, an input/output (IO) control logic, a gate control logic, and an inverter. The pull-down driver includes first, second, and third transistors that are sequentially coupled between a pad and a ground node. The IO control logic is configured to receive a clock signal and an enable signal, and transfer a first control signal to the third transistor. The gate control logic is configured to receive a voltage of the pad and output a feedback voltage to a gate electrode of the first transistor. The inverter is configured to invert the enable signal and transfer an inverted enable signal to the gate control logic. Therefore, the reliability of the output driving circuit can be improved.
1. An output driving circuit, comprising:
a pad coupled to at least two resistors, a voltage of the pad changing based on a clock signal;
a pull-down driver including at least two transistors sequentially coupled in series between the pad and a ground node, a first transistor of the at least two transistors being adjacent to the ground node, and a second transistor of the at least two transistors being adjacent to the pad;
an input/output control logic configured to receive the clock signal and an enable signal, and transfer a control signal to a gate electrode of the first transistor;
a gate control logic configured to receive a voltage of the pad and output a feedback voltage to a gate electrode of the second transistor; and
an inverter configured to invert the enable signal and transfer an inverted enable signal to the gate control logic,
wherein the gate control logic includes at least two transistors including third and fourth transistors coupled in series between a first resistor and a first supply voltage node, the first resistor is one of the at least two resistors, the third transistor of the at least two transistors is adjacent to the pad and receives the first supply voltage, and the fourth transistor of the at least two transistors is adjacent to the first supply voltage node and receives the inverted enable signal.
2. The output driving circuit according to claim 1 , further comprising a fifth transistor coupled between the first transistor and the second transistor, wherein the voltage value of a gate electrode of the fifth transistor is greater than the voltage value of a drain electrode of the fifth transistor.
3. The output driving circuit according to claim 1 , wherein the logical value of the enable signal received by the input/output control logic is different to the logical value of the inverted enable signal received by the gate control logic.
4. The output driving circuit according to claim 1 , wherein the first resistor is an internal resistor coupled between the pad and the gate control logic.
5. The output driving circuit according to claim 1 , wherein the voltage of the pad is a voltage having a value of about 1.8 V and greater.
6. The output driving circuit according to claim 1 , wherein the voltage of the pad is a voltage having a value of from about 1.8 V to about 3.3 V.
7. The output driving circuit according to claim 1 , wherein the at least two transistors included in the pull-down driver are NMOS transistors.
8. The output driving circuit according to claim 1 , wherein:
the gate control logic further comprises a sixth transistor coupled between the third transistor and the fourth transistor, and
the voltage of the pad is applied to a gate electrode of the sixth transistor.
9. The output driving circuit according to claim 1 , wherein a voltage of bulk regions of the at least two transistors of the gate control logic is outputted as the feedback voltage.
10. The output driving circuit according to claim 1 , wherein the at least two transistors of the gate control logic are PMOS transistors.
11. The output driving circuit according to claim 1 , wherein the at least two transistors of the pull-down driver have an oxide layer whose thickness is same with thickness of a transistor fabricated by under 32 nm process.
12. The output driving circuit according to claim 1 , wherein the at least two transistors of the pull-down driver have an oxide layer whose thickness is thinner than thickness of a transistor fabricated by 32 nm process.
13. The output driving circuit according to claim 1 , wherein the at least two transistors of the pull-down driver are medium gate oxide devices operating at 1.8V.
14. The output driving circuit according to claim 1 , wherein the at least two transistors of the gate control logic have an oxide layer whose thickness is same with thickness of a transistor fabricated by under 32 nm process.
15. The output driving circuit according to claim 1 , wherein the at least two transistors of the gate control logic have an oxide layer whose thickness is thinner than thickness of a transistor fabricated by 32 nm process.
16. The output driving circuit according to claim 1 , wherein the at least two transistors of the gate control logic are medium gate oxide devices operating at 1.8V.