Fabricating Sub-Lithographic Devices

1 . A method of fabricating a sub-lithographic device, comprising:

depositing a resist layer on a substrate, the resist layer having a sensitivity to a radiant energy, wherein the resist layer has a first exposure time, and wherein a position for a first component of a plurality of components corresponds to a first portion of the resist layer;

positioning a first mask over the substrate, the first mask including a first aperture corresponding to a first region of the resist layer aligned with a first corner, the first region including the first portion and having a size larger than a component size for the first component, and the position includes the first corner and a second corner diagonally opposed to the first corner;

after positioning the first mask, exposing the resist layer to the radiant energy for a first time, less than the first exposure time, to partially expose the first region;

adjusting positioning of the first mask with respect to the substrate such that the first aperture in the first mask corresponds to a second region of the resist layer aligned with the second corner, the second region partially overlapping the first region, wherein the overlap of the first region and the second region is the first portion of the resist layer;

after adjusting the positioning of the first mask, exposing the resist layer to the radiant energy for a second time, less than the first exposure time, wherein sum of the first time and the second time is equal to, or greater than, the first exposure time such that, after exposing for the first time and the second time, the first portion of the resist layer is fully exposed to the radiant energy;

forming an opening in the resist layer by removing the fully exposed first portion of the resist layer; and

depositing material for the first component within the opening in the resist layer.

2 . The method of claim 1 , further comprising:

determining a second pitch based on the component size and positioning of each of the plurality of components, wherein the second pitch is selected to prevent undesirable overlap when adjusting the positioning of the first mask; and

generating the first mask based on the second pitch.

3 . The method of claim 1 , further comprising producing the first mask for fabrication of a plurality of sub-lithographic devices, including the sub-lithographic device, comprising:

associating the first aperture in the first mask to the sub-lithographic device;

associating a second aperture in the first mask to a second sub-lithographic device, distinct from the sub-lithographic device;

determining a first area of the resist layer that will be at least partially exposed via the first aperture and adjustments to the first mask positioning during fabrication of the plurality of components;

determining a second area of the resist layer that will be at least partially exposed via the second aperture and the adjustments to the first mask during fabrication of a second plurality of components for the second sub-lithographic device;

determining a pitch for the first mask based on a spacing between the plurality of sub-lithographic devices, the pitch sufficient to prevent overlap of the first area and the second area; and

generating the first mask with the first aperture, the second aperture, and the determined pitch.

4 . The method of claim 1 , further comprising selecting the first time to be at least half of the first exposure time.

5 . The method of claim 1 , further comprising depositing a hard mask layer, such that cavities are not formed in partially exposed regions of the resist layer.

6 . The method of claim 1 , wherein removing the fully exposed resist region is performed by using a developer solution.

7 . The method of claim 1 , further comprising:

prior to depositing the resist layer, depositing a dielectric layer over the substrate;

after forming the opening in the resist layer, etching a corresponding opening in the dielectric layer; and

removing the remaining resist layer;

wherein depositing the material comprises depositing the material in the opening of the dielectric layer.

8 . The method of claim 1 , wherein adjusting positioning of the first mask comprises one or more of: stepping the first mask along a first axis, and stepping the first mask along a second axis.

9 . The method of claim 1 , further comprising:

removing the first mask and positioning a second mask over the substrate, the second mask including a third aperture corresponding to a third region of the resist layer, the third region including a second portion of the resist layer and having a size larger than a component size for a second component of the plurality of components, wherein the positioning for the second component corresponds to the second portion; and

after positioning the second mask, exposing the resist layer to the radiant energy for a third time, less than the first exposure time, to partially expose the third region.

10 . The method of claim 1 , wherein the substrate is planar.

11 . A sub-lithographic device, comprising:

a plurality of components, including a first component fabricated by a method comprising the steps of:

depositing a resist layer on a substrate, the resist layer having a sensitivity to a radiant energy, wherein the resist layer has a first exposure time, and wherein a position for a first component of a plurality of components corresponds to a first portion of the resist layer;

positioning a first mask over the substrate, the first mask including a first aperture corresponding to a first region of the resist layer aligned with a first corner, the first region including the first portion and having a size larger than a component size for the first component, and the position includes the first corner and a second corner diagonally opposed to the first corner;

after positioning the mask, exposing the resist layer to the radiant energy for a first time, less than the first exposure time, to partially expose the first region;

adjusting positioning of the first mask with respect to the substrate such that the first aperture in the first mask corresponds to a second region of the resist layer, the second region partially overlapping the first region, wherein the overlap of the first region and the second region is the first portion of the resist layer;

after adjusting the positioning of the first mask, exposing the resist layer to the radiant energy for a second time, less than the first exposure time, wherein sum of the first time and the second time is equal to, or greater than, the first exposure time such that, after exposing for the first time and the second time, the first portion of the resist layer is fully exposed to the radiant energy;

forming an opening in the resist layer by removing the fully exposed first portion of the resist layer; and

depositing material for the first component within the opening in the resist layer.

12 . The method of claim 1 , wherein a smallest dimension of the component is less than a predefined minimum feature size that can be defined using the lithographic process.