Nanoparticle with plural functionalities, and method of forming the nanoparticle
A nanoparticle includes a cuboid base including a semiconductor material, and a plurality of surfaces formed on the base and including a plurality of functionalities, respectively.
1. A nanoparticle comprising:
a cuboid base comprising a semiconductor material; and
a plurality of surfaces formed on the cuboid base and including a plurality of functionalities, respectively, the plurality of surfaces comprising:
a first surface including a first layer formed on a first side of the cuboid base; and
a second surface including a second layer different than the first layer, the second layer being formed on a second side of the cuboid base and on a side of the first layer.
2. The nanoparticle of claim 1 , wherein the first layer comprises a first functionality, and the second layer comprises a second functionality different from the first functionality.
3. The nanoparticle of claim 2 , wherein the second functionality is different from the first functionality in at least one of a bonding property, an energy absorption property and a biodegradability property.
4. The nanoparticle of claim 1 , wherein the plurality of surfaces further comprises a third surface including the semiconductor material.
5. A pharmaceutical comprising the nanoparticle of claim 1 .
6. The nanoparticle of claim 4 , wherein the first layer, comprises an insulator layer including a silicon nitride layer, and
wherein the second layer comprises a metal layer including a gold layer.
7. The nanoparticle of claim 4 , wherein the metal layer is formed on the first side of the cuboid base and on the side of the insulator layer.
8. The nanoparticle of claim 4 , wherein the plurality of surfaces further comprises a fourth surface formed opposite the second surface and including the metal layer.
9. The nanoparticle of claim 8 , wherein the plurality of surfaces further comprises a fifth surface formed opposite the third surface and including the semiconductor material.
10. The nanoparticle of claim 9 , wherein the plurality of surfaces further comprises a sixth surface formed opposite the first surface and including the semiconductor material.
11. The nanoparticle of claim 1 , wherein the semiconductor material comprises one of silicon, germanium, silicon germanium, a group III-V semiconductor material and a group II-VI semiconductor material.
12. The nanoparticle of claim 1 , wherein the cuboid base comprises one of a rectangular cuboid shape and a square cuboid shape.
13. The nanoparticle of claim 1 , wherein a side of the cuboid base has a length in a range from 2 nm to 50 nm.
14. A nanoparticle comprising:
a cuboid base comprising a semiconductor material;
a first layer having a first functionality and formed on a first side of the cuboid base; and
a second layer having a second functionality different than the first functionality and formed on a second side of the cuboid base and on a side of the first layer.
15. The nanoparticle of claim 14 , wherein the first layer comprises a functionality different from a functionality of the semiconductor material.
16. The nanoparticle of claim 14 , wherein the second layer comprises a functionality different from the functionality of the semiconductor material.
17. The nanoparticle of claim 14 , wherein the first layer comprises an insulator layer and the second layer comprises a metal layer.
18. The nanoparticle of claim 17 , wherein the insulator layer comprises a silicon nitride layer and the metal layer comprises a gold layer.
19. A nanoparticle comprising:
a cuboid base comprising a semiconductor material;
a first surface comprising a first layer having a first functionality and formed on a first side of the cuboid base;
a second surface comprising a second layer having a second functionality different from the first functionality and formed on a second side of the cuboid base and on a side of the first layer;
a third surface comprising the semiconductor material;
a fourth surface formed opposite the second surface and including the second layer;
a fifth surface formed opposite the third surface and including the semiconductor material; and
a sixth surface formed opposite the first surface and including the semiconductor material.