Semiconductor package including low side field-effect transistors and high side field-effect transistors and method of making the same
A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second low side FET, a first high side FET, and a second high side FET to the lead frame; mounting a first metal clip and a second metal clip; forming a molding encapsulation; and applying a singulation process.
1. A semiconductor package comprising:
a lead frame comprising
a first, second, third and fourth die paddles separated from one another, the first die paddle and the second die paddle facing each other, and the third die paddle and the fourth die paddle facing each other;
a first low side field-effect transistor (FET) being flipped and attached to the first die paddle, the first low side FET comprising a source electrode and a gate electrode on a top surface of the first low side FET;
a second low side FET being flipped and attached to the second die paddle, the second low side FET comprising a source electrode and a gate electrode on a top surface of the second low side FET;
a first high side FET attached to the third die paddle, the first high side FET comprising a source electrode and a gate electrode on a top surface of the first high side FET;
a second high side FET attached to the fourth die paddle, the second high side FET comprising a source electrode and a gate electrode on a top surface of the second high side FET;
a first metal clip connecting a drain electrode of the first low side FET to the source electrode of the first high side FET;
a second metal clip connecting a drain electrode of the second low side FET to the source electrode of the second high side FET; and
a molding encapsulation enclosing the first low side FET, the second low side FET, the first high side FET, the second high side FET, the first metal clip, the second metal clip, and a majority portion of the lead frame.
2. The semiconductor package of claim 1 , wherein the first metal clip comprises an elevated section located at a center portion of the first metal clip; and
wherein the second metal clip comprises an elevated section located at a center portion of the second metal clip.
3. The semiconductor package of claim 1 further comprising an integrated circuit (IC) controller,
wherein a first end of the IC controller is mounted on the first metal clip through a first non-conductive adhesive;
wherein a second end of the IC controller is mounted on the second metal clip through a second non-conductive adhesive;
wherein the first end of the IC controller is above the first die paddle; and
wherein the second end of the IC controller is above the second die paddle.
4. The semiconductor package of claim 3 , wherein the molding encapsulation further encloses the IC controller.
5. The semiconductor package of claim 1 , further comprising an inductor,
wherein a first end of the inductor is mounted on the first metal clip through a first conductive adhesive;
wherein a second end of the inductor is mounted on the second metal clip through a second conductive adhesive;
wherein the first end of the inductor is above the third die paddle; and
wherein the second end of the inductor is above the fourth die paddle.
6. The semiconductor package of claim 5 further comprising an integrated circuit (IC) controller,
wherein a first end of the IC controller is mounted on the first metal clip through a first non-conductive adhesive;
wherein a second end of the IC controller is mounted on the second metal clip through a second non-conductive adhesive;
wherein the first end of the IC controller is above the first die paddle; and
wherein the second end of the IC controller is above the second die paddle.
7. The semiconductor package of claim 6 , wherein the IC controller is disposed above the first low side FET and the second low side FET; wherein the inductor is disposed above the first high side FET and the second high side FET; and wherein the molding encapsulation further encloses the inductor and the IC controller.
8. The semiconductor package of claim 7 , wherein a bottom surface of the first die paddle is exposed from the molding encapsulation; a bottom surface of the second die paddle is exposed from the molding encapsulation; a bottom surface of the third die paddle is exposed from the molding encapsulation; and a bottom surface of the fourth die paddle is exposed from the molding encapsulation.
9. The semiconductor package of claim 1 , wherein the first metal clip comprises an elevated section located at a center portion of the first metal clip;
wherein the second metal clip comprises an elevated section located at a center portion of the second metal clip; and
wherein a bottom surface of the flipped first low side FET, a bottom surface of the flipped second low side FET, the top surface of the first high side FET, and the top surface of the second high side FET are co-planar.
10. The semiconductor package of claim 1 , wherein an entirety of the molding encapsulation is formed in a same fabrication step.
11. A semiconductor package comprising:
a lead frame comprising
a first, second, third and fourth die paddles separated from one another, the first die paddle and the second die paddle facing each other, and the third die paddle and the fourth die paddle facing each other;
a first low side field-effect transistor (FET) being flipped and attached to the first die paddle, the first low side FET comprising a source electrode and a gate electrode on a top surface of the first low side FET;
a second low side FET being flipped and attached to the second die paddle, the second low side FET comprising a source electrode and a gate electrode on a top surface of the second low side FET;
a first high side FET attached to the third die paddle, the first high side FET comprising a source electrode and a gate electrode on a top surface of the first high side FET;
a second high side FET attached to the fourth die paddle, the second high side FET comprising a source electrode and a gate electrode on a top surface of the second high side FET;
a first metal clip connecting a drain electrode of the first low side FET to the source electrode of the first high side FET;
a second metal clip connecting a drain electrode of the second low side FET to the source electrode of the second high side FET; and
a molding encapsulation enclosing the first low side FET, the second low side FET, the first high side FET, the second high side FET, the first metal clip, and the second metal clip.
12. The semiconductor package of claim 11 , wherein the first metal clip comprises an elevated section located at a center portion of the first metal clip;
wherein the second metal clip comprises an elevated section located at a center portion of the second metal clip; and
wherein a bottom surface of the flipped first low side FET, a bottom surface of the flipped second low side FET, the top surface of the first high side FET, and the top surface of the second high side FET are co-planar.
13. The semiconductor package of claim 11 , wherein an entirety of the molding encapsulation is formed in a same fabrication step.
14. The semiconductor package of claim 11 , further comprising
an integrated circuit (IC) controller,
wherein a first end of the IC controller is mounted on the first metal clip through a first non-conductive adhesive;
wherein a second end of the IC controller is mounted on the second metal clip through a second non-conductive adhesive;
wherein the first end of the IC controller is above the first die paddle; and
wherein the second end of the IC controller is above the second die paddle.
15. The semiconductor package of claim 11 , further comprising an inductor,
wherein a first end of the inductor is mounted on the first metal clip through a first conductive adhesive;
wherein a second end of the inductor is mounted on the second metal clip through a second conductive adhesive;
wherein the first end of the inductor is above the third die paddle; and
wherein the second end of the inductor is above the fourth die paddle.
16. The semiconductor package of claim 15 further comprising an integrated circuit (IC) controller,
wherein a first end of the IC controller is mounted on the first metal clip through a first non-conductive adhesive;
wherein a second end of the IC controller is mounted on the second metal clip through a second non-conductive adhesive;
wherein the first end of the IC controller is above the first die paddle; and
wherein the second end of the IC controller is above the second die paddle.
17. The semiconductor package of claim 16 , wherein the IC controller is disposed above the first low side FET and the second low side FET; wherein the inductor is disposed above the first high side FET and the second high side FET; and wherein the molding encapsulation further encloses the inductor and the IC controller.