Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

generating a pre-OPC mask layout including a notch design of which a boundary corresponds to an outer boundary of a combined mask pattern of a preliminary rectangular mask pattern and a hexagonal mask pattern that is placed on at least one side of the preliminary rectangular mask pattern;

dividing an edge of the hexagonal mask pattern of the combined mask pattern into a plurality of fragments, wherein the edge of the hexagonal mask pattern of the combined mask pattern is placed outside the preliminary rectangular mask pattern;

inputting mask data of the pre-OPC mask layout with the plurality of fragments to an optical proximity correction (OPC) model;

estimating a contour of a first target pattern transcribed from the combined mask pattern through simulation;

calculating an edge placement error (EPE) that is a difference between the contour and an edge of an intended target pattern;

determining a displacement of each of the plurality of fragments based on the EPE;

generating a corrected mask layout by moving each of the plurality of fragments by the displacement; and

forming a target mask and the semiconductor device based on the corrected mask layout.

2. The method of claim 1 ,

wherein the pre-OPC mask layout includes a mask pattern corresponding to a multi-height cell including a plurality of standard cells arranged and connected to each other in a first direction and a notch between two adjacent standard cells of the plurality of standard cells, and

wherein the mask pattern includes the combined mask pattern that corresponds to the notch of the multi-height cell.

3. The method of claim 2 ,

wherein the intended target pattern is implemented by one mask formed using the corrected mask layout.

4. The method of claim 1 , further comprising:

repeating of the estimating of the contour, the calculating of the EPE, the determining of the displacement and the generating of the corrected mask layout is performed on a previously generated corrected mask layout until the EPE is less than or equal to a set reference value.

5. The method of claim 4 ,

wherein when a number of times that the repeating is performed reaches a set reference number, the repeating is terminated.

6. The method of claim 1 ,

wherein the hexagonal mask pattern is placed on each of two short sides of the at least one side of the preliminary rectangular mask pattern.

7. The method of claim 6 ,

wherein the hexagonal mask pattern of the combined mask pattern comprises a first side and a second side that surround a first vertex at which a first short side of the two short sides of the preliminary rectangular mask pattern meets a first long side thereof, a fourth side and a fifth side that surround a second vertex at which the first short side meets a second long side, and a third side that connects the second side to the fourth side, and

wherein the first to fifth sides are positioned outside the preliminary rectangular mask pattern to form the outer boundary of the combined mask pattern and a sixth side that faces the third side does not exist in the combined mask pattern.

8. The method of claim 7 ,

wherein the plurality of fragments include a first fragment and a second fragment corresponding to the first side and the second side, respectively,

wherein the first fragment and the second fragment share a first control point on the intended target pattern,

wherein the plurality of fragments further include a fourth fragment and a fifth fragment corresponding to the fourth side and the fifth side, respectively, that share a second control point on the intended target pattern, and

wherein the calculating of the EPE is performed on the first control point and the second control point.

9. The method of claim 1 ,

wherein by repeating of the estimating of the contour, the calculating of the EPE, the determining of the displacement and the generating of the corrected mask layout using a previously generated corrected mask layout, a corner rounding radius (RCC) of a target pattern transcribed from the corrected mask layout is minimized.

10. The method of claim 1 ,

wherein the determining of the displacement is performed by multiplying a set feedback factor to the EPE.