Semiconductor package having magnetic interconnects and related methods
View Patent ↗Implementations of semiconductor packages may include a first die including a plurality of contact pads, a second die including a plurality of contact pads, a plurality of solder interconnects bonding the plurality of contact pads of the first die to the plurality of contact pads of the second die, and a plurality of magnetic particles each coated in an oxide included in each of the plurality of solder interconnects.
1. A semiconductor package comprising:
a first die comprising a plurality of contact pads;
a second die comprising a plurality of contact pads;
a plurality of solder interconnects bonding the plurality of contact pads of the first die to the plurality of contact pads of the second die; and
a plurality of magnetic particles each coated in an oxide comprised in each of the plurality of solder interconnects.
2. The package of claim 1 , wherein the plurality of magnetic particles comprise Ni, Co, Fe, Fe 3 O 4 , or any combination thereof.
3. The package of claim 1 , wherein a pitch of the plurality of solder interconnects is less than 100 micrometers.
4. The package of claim 1 , wherein the plurality of contact pads of the first die are bonded to the plurality of contact pads of the second die through an application of a magnetic field to the plurality of solder interconnects.
5. The package of claim 1 , wherein the plurality of magnetic particles is more heavily concentrated near the second die than the first die.
6. The package of claim 1 , wherein the oxide comprises silicon dioxide.
7. A method of forming a semiconductor package comprising:
forming a plurality of solder interconnects on a first die, wherein the plurality of solder interconnects comprise magnetic particles coated in an oxide;
coupling a second die over the first die;
reflowing the plurality of solder interconnects; and
applying a magnetic field to the plurality of solder interconnects to join the first die to the second die.
8. The method of claim 7 , wherein the magnetic particles comprise Ni, Co, Fe, Fe 3 O 4 , or any combination thereof.
9. The method of claim 7 , wherein the oxide comprises silicon dioxide.
10. The method of claim 7 , wherein a pitch of the plurality of solder interconnects is less than 100 micrometers.
11. The method of claim 7 , wherein the magnetic field applied is between 100-1000 gauss.
12. The method of claim 7 , further comprising cooling the plurality of solder interconnects while applying the magnetic field.
13. The method of claim 7 , wherein the solder interconnects comprise 10-20% magnetic particles coated in an oxide, by volume.
14. A method of forming a semiconductor package comprising:
forming a plurality of solder interconnects on a first die, wherein the plurality of solder interconnects comprise magnetic particles coated in an oxide;
coupling a second die over the first die;
reflowing the plurality of solder interconnects;
increasing a height of the plurality of solder interconnects by applying a magnetic field to the plurality of solder interconnects; and
cooling the plurality of solder interconnects, wherein the magnetic field is applied during reflowing and cooling of the plurality of solder interconnects.
15. The method of claim 14 , wherein the magnetic particles comprise Ni, Co, Fe, Fe 3 O 4 , or any combination thereof.
16. The method of claim 14 , wherein the oxide comprises silicon dioxide.
17. The method of claim 14 , wherein a pitch of the plurality of solder interconnects is less than 100 micrometers.
18. The method of claim 14 , wherein the magnetic field applied is between 100-1000 gauss.
19. The method of claim 14 , wherein each of the magnetic particles is between 0.1-1.0 micrometers long.
20. The method of claim 14 , wherein the plurality of solder interconnects comprise 10-20% magnetic particles coated with the oxide, by volume.