Semiconductor device and method for fabricating a semiconductor device
A semiconductor device includes a first stacked structure including word lines and dielectric layers alternately stacked over a substrate. The semiconductor device also includes a plurality of first vertical channel structures formed through the first stacked structure and a second stacked structure including gate electrodes and dielectric layers alternately stacked over the first stacked structure. The semiconductor device further includes a plurality of second vertical channel structures formed through the second stacked structure, wherein the plurality of second vertical channel structures are respectively connected to the plurality of first vertical channel structures. The semiconductor device additionally includes an isolating layer for isolating the plurality of second vertical channel structures into first and second regions. Both sidewalls of the isolating layer contact sidewalls of the second vertical channel structures of the plurality of second vertical channel structures positioned at the boundary between the first and second regions.
1. A semiconductor device comprising:
a first stacked structure comprising word lines and dielectric layers alternately stacked over a substrate;
a plurality of first vertical channel structures formed through the first stacked structure;
a second stacked structure including gate electrodes and dielectric layers alternately stacked over the first stacked structure;
a plurality of second vertical channel structures formed through the second stacked structure, wherein the plurality of second vertical channel structures are respectively connected to the plurality of first vertical channel structures; and
an isolating layer for isolating the plurality of second vertical channel structures into first and second regions,
wherein both sidewalls of the isolating layer contact sidewalls of second vertical channel structures of the plurality of second vertical channel structures positioned at the boundary between the first and second regions.
2. The semiconductor device of claim 1 , wherein each of both of the sidewalls of the isolating layer comprises linear shape sidewalls and round shape sidewalls which are continuous with each other.
3. The semiconductor device of claim 2 , wherein the round shape sidewalls contact sidewalls of the second vertical channel structures positioned at the boundary between the first and second regions.
4. The semiconductor device of claim 1 , wherein the isolating layer comprises a dielectric material.
5. The semiconductor device of claim 1 , wherein the first vertical channel structures are a part of a cell string, and wherein the second vertical channel structures are a part of a select transistor for selecting the cell string.
6. A semiconductor device comprising:
a stacked structure comprising gate electrodes and dielectric layers alternately stacked over a substrate, the stacked structure having a first edge sidewall extending in a first direction parallel to the substrate;
a plurality of first edge vertical channel structures formed through the first edge sidewall of the stacked structure in a second direction perpendicular to the substrate,
wherein sidewalls of the plurality of first edge vertical channel structures are partially surrounded by the first edge sidewall; and
internal vertical channel structures spaced apart from the first edge vertical channel structures and formed through the stacked structure,
wherein the internal vertical channel structures are isolated from each other in a third direction which is parallel to the substrate and crosses the first direction, and
wherein the sidewalls of the internal vertical channel structures are completely surrounded by the stacked structure.
7. The semiconductor device of claim 6 , wherein the first edge sidewall comprises linear shape sidewalls and round shape sidewalls which are continuous with each other in the first direction.
8. The semiconductor device of claim 7 , wherein the round shape sidewalls of the first edge sidewall contact respective sidewalls of the plurality of first edge vertical channel structures.
9. The semiconductor device of claim 7 , wherein the round shape sidewalls of the first edge sidewall vertically extend in the second direction.
10. The semiconductor device of claim 6 , wherein the stacked structure further comprises a second edge sidewall extending in the first direction parallel to the substrate and spaced apart from the first edge sidewall.
11. The semiconductor device of claim 10 , wherein the second edge sidewall comprises linear shape sidewalls and round shape sidewalls which are continuous with each other in the first direction.
12. The semiconductor device of claim 11 , wherein the round shape sidewalls of the second edge sidewall vertically extend in the second direction.
13. The semiconductor device of claim 11 , further comprising a plurality of second edge vertical channel structures contacting the round shape sidewalls of the second edge sidewall,
wherein the second edge vertical channel structures are spaced apart from the first edge vertical channel structures and the internal vertical channel structures.
14. The semiconductor device of claim 13 , wherein a distance between the first edge vertical channel structures and the second edge vertical channel structures is equal to a distance between the internal vertical channel structures, and
wherein the first edge vertical channel structures, the second edge vertical channel structures, and the internal vertical channel structures are arrayed uniformly with repeated intervals.
15. The semiconductor device of claim 13 , further comprising an isolating layer formed between the first edge vertical channel structures and the second edge vertical channel structures.
16. The semiconductor device of claim 15 , wherein the isolating layer comprises a plurality of round shape sidewalls, and wherein the round shape sidewalls contact the first edge vertical channel structures and the second edge vertical channel structures.