SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1 . (canceled)
2 . A semiconductor device comprising:
a first insulating film over a substrate, the first insulating film comprising silicon nitride;
a second insulating film over the first insulating film, the second insulating film comprising silicon oxide; and
an oxide semiconductor film over the second insulating film,
wherein the oxide semiconductor film comprises indium and zinc.
3 . The semiconductor device according to claim 2 ,
wherein the oxide semiconductor film further comprises gallium.
4 . The semiconductor device according to claim 2 ,
wherein the first insulating film and the second insulating film each have a thickness of 50 nm to 100 nm.
5 . The semiconductor device according to claim 2 ,
wherein the oxide semiconductor film has a thickness of 200 nm or less.
6 . The semiconductor device according to claim 2 ,
wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.
7 . The semiconductor device according to claim 2 , further comprising a passivation film over the oxide semiconductor film,
wherein the passivation film comprises silicon oxide.
8 . The semiconductor device according to claim 7 ,
wherein the passivation film is in direct contact with the oxide semiconductor film.
9 . The semiconductor device according to claim 7 ,
wherein the passivation film is in direct contact with the second insulating film.
10 . A semiconductor device comprising:
a gate electrode over a substrate;
a first gate insulating film over the gate electrode, the first gate insulating film comprising silicon nitride;
a second gate insulating film over the first gate insulating film, the second gate insulating film comprising silicon oxide; and
an oxide semiconductor film over the second gate insulating film,
wherein the oxide semiconductor film comprises indium and zinc.
11 . The semiconductor device according to claim 10 ,
wherein the oxide semiconductor film further comprises gallium.
12 . The semiconductor device according to claim 10 ,
wherein the first gate insulating film and the second gate insulating film each have a thickness of 50 nm to 100 nm.
13 . The semiconductor device according to claim 10 ,
wherein the oxide semiconductor film has a thickness of 200 nm or less.
14 . The semiconductor device according to claim 10 ,
wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.
15 . A semiconductor device comprising:
a gate electrode over a substrate;
a first gate insulating film over the gate electrode, the first gate insulating film comprising silicon nitride;
a second gate insulating film over the first gate insulating film, the second gate insulating film comprising silicon oxide;
an oxide semiconductor film over the second gate insulating film; and
a passivation film over the oxide semiconductor film,
wherein the passivation film comprises silicon oxide.
16 . The semiconductor device according to claim 15 ,
wherein the oxide semiconductor film comprises indium and zinc.
17 . The semiconductor device according to claim 16 ,
wherein the oxide semiconductor film further comprises gallium.
18 . The semiconductor device according to claim 15 ,
wherein the first gate insulating film and the second gate insulating film each have a thickness of 50 nm to 100 nm.
19 . The semiconductor device according to claim 15 ,
wherein the oxide semiconductor film has a thickness of 200 nm or less.
20 . The semiconductor device according to claim 15 ,
wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.
21 . The semiconductor device according to claim 15 ,
wherein the passivation film is in direct contact with the oxide semiconductor film.
22 . The semiconductor device according to claim 15 ,
wherein the passivation film is in direct contact with the second gate insulating film.