Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same

1. A surface-mountable semiconductor laser comprising:

a semiconductor layer sequence having at least one generation region between a p-side and an n-side, the generation region configured to generate laser radiation;

at least two contact surfaces for external electrical contacting the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser is contactable without bonding wires;

at least one of a plurality of conductor rails extending from a side with the contact surfaces completely across the semiconductor layer sequence and, viewed in a plan view, adjoining an edge of the semiconductor layer sequence so that the conductor rails are only partly surrounded by a material of the semiconductor layer sequence; and

a plurality of through-connections running at least completely through the generation region coming from the side of the contact surfaces and, viewed in a plan view, lie within the semiconductor layer sequence so that the through-connections are surrounded all around by a material of the semiconductor layer sequence,

wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm 2 ,

wherein at least one of the through-connections or the conductor rails are arranged in at least two rows when viewed in plan view, and in each case at least one of the rows is located on each side of a longitudinal axis, the longitudinal axis being a resonator axis of the semiconductor laser, wherein each of the rows contains at least one of some of the through-connections and of the conductor rails, and

wherein the semiconductor laser is an edge emitter.

2. The semiconductor laser according to claim 1 , wherein the semiconductor laser comprises the plurality of the conductor rails.

3. The semiconductor laser according to claim 1 , wherein the semiconductor laser comprises the plurality of the through-connections.

4. The semiconductor laser according to claim 1 ,

wherein in the semiconductor layer sequence comprises at least two elongated trenches having oblique side surfaces and a bottom surface,

wherein the trenches completely penetrate the generation region and are configured to prevent parasitic laser modes, and

wherein the trenches are at least partially filled with a material absorbent to the laser radiation.

5. The semiconductor laser according to claim 4 ,

wherein at least some of the through-connections end at the bottom surface,

wherein, coming from the through-connections, a metallic current expansion element reaches until at least one of the p-side and the n-side across at least one of the side surfaces, and

wherein the current expansion element forms at least a part of the absorbent material.

6. The semiconductor laser according to claim 5 ,

wherein the through-connections lying on both sides of the longitudinal axis on the p-side or on the n-side are connected to one another via a continuous, flat current expansion element, and

wherein the current expansion element electrically contacts the generation region in a planar manner.

7. The semiconductor laser according to claim 4 ,

wherein at least one of the through-connections, coming from either the p-side or the n-side, terminates at the bottom surface, and the at least one through-connection covers at least a part of a side surface facing away from the generation region, and

wherein either the n-side or the p-side, from which the through-connection does not come from, is electrically contacted by the through-connection.

8. The semiconductor laser according to claim 1 ,

wherein at least one of the through-connections and the conductor rails are arranged mirror-symmetrically with respect to the longitudinal axis when viewed in plan view, and

wherein between 8 and 42 inclusive of the through-connections and the conductor rails are present.

9. The semiconductor laser according to claim 1 ,

wherein the semiconductor layer sequence has at least one planar current-conducting layer configured to laterally expand current at one side of the generation region and this side is free of a metallic or oxidic current expansion element,

wherein the current-conducting layer is in ohmic contact with one of the contact surfaces, and

wherein the current-conducting layer is based on the same semiconductor material system as the generation region and has at least a factor 5 higher average dopant concentration than the generation region.

10. The semiconductor laser according to claim 1 , wherein, seen in plan view, a quotient of at least one of a surface area of the through-connections or a surface area of the conductor rails as a whole and a surface area of the generation region is between 0.02 and 0.2 inclusive.

11. The semiconductor laser according to claim 1 , further comprising a growth substrate on which the semiconductor layer sequence is grown,

wherein the growth substrate is electrically conductive,

wherein the semiconductor layer sequence is based on AlInGaAs, and

wherein the generation region comprises a plurality of active layers which are connected to one another via tunnel diodes arranged electrically in series within the generation region.

12. The semiconductor laser according to claim 1 ,

wherein the semiconductor layer sequence has at least two generation regions arranged parallel to one another when seen in plan view, and

wherein at least one of the contact surfaces is located between the generation regions when viewed in plan view.

13. An arrangement comprising:

at least one semiconductor laser according to claim 1 ; and

a driver configured for pulsed operation of the semiconductor laser with time-wise currents of at least 10 A,

wherein the semiconductor laser is electrically connected to the driver without bonding wires so that all of the contact surfaces are located on a side of the semiconductor layer sequence facing the driver.

14. A method for operating the arrangement according to claim 13 comprising:

operating the semiconductor laser in a pulsed manner with time-wise current densities of at least 30 A/mm 2 in the generation region.