RRAM write using a ramp control circuit

1. A resistive random access memory (RRAM) circuit, comprising:

an array of RRAM cells, the array having one or more source lines and one or more bitlines;

a control circuit coupled to the array of RRAM cells to set one of the RRAM cells to a low resistance state (LRS) in a set operation and reset the one of the RRAM cells to a high resistance state (HRS) in a reset operation;

a ramp control circuit coupled to the control circuit to ramp a voltage applied to a bitline or a source line, coupled to the one of the RRAM cells, during the set operation or the reset operation;

wherein the ramp control circuit comprises a current mirror coupled to a common supply; and

wherein the control circuit comprises an H bridge to couple the common supply to the bitline during the set operation and to couple the common supply to the source line during the reset operation.

2. The RRAM circuit of claim 1 , wherein:

the control circuit is further to hold the voltage at a maximum set voltage or a maximum reset voltage during a second time interval of the set operation or the reset operation, after the ramp control circuit ramps the voltage up to the maximum set voltage or the maximum reset voltage during a first time interval of the set operation or the reset operation.

3. The RRAM circuit of claim 1 , wherein:

the ramp control circuit is to limit current applied to the bitline or the source line during a first time interval of the set operation or the reset operation; and

the control circuit is to limit the voltage applied to the bitline or the source line, during a second time interval of the set operation or the reset operation.

4. The RRAM circuit of claim 1 , wherein the ramp control circuit comprises a current limiter having a current limit adjuster.

5. The RRAM circuit of claim 3 , further comprising:

a bitline/source line multiplexer to provide the current to the bitline during the set operation, and to provide the current to the source line during the reset operation.

6. A resistive random access memory (RRAM) circuit, comprising:

an array of RRAM cells, the array having one or more source lines and one or more bitlines;

a control circuit coupled to the array of RRAM cells to set one of the RRAM cells to a low resistance state (LRS) in a set operation and reset the one of the RRAM cells to a high resistance state (HRS) in a reset operation;

a ramp control circuit coupled to the control circuit to ramp a voltage applied to a bitline or a source line, coupled to the one of the RRAM cells, during the set operation or the reset operation;

a current limiter; and

an adjuster circuit operatively coupled with the current limiter to adjust a current limit of the current limiter;

wherein the adjuster circuit is to adjust a first current limit of a first current that is applied to the bitline or the source line for the ramping of the voltage;

wherein the adjuster circuit is to adjust a second current limit of a second current that is applied to the source line to be lower than the first current limit of the first current that is applied to the bitline;

wherein the ramp control circuit is to control, through the current limiter, the first current applied to the bitline, during a first time interval of the set operation of the RRAM cell; and

wherein the ramp control circuit is to control, through the current limiter, the second current applied to the source line, during a first time interval of the reset operation of the RRAM cell.

7. The RRAM circuit of claim 6 , wherein:

the RRAM cell comprises an access transistor and a filament structure on a bitline side of the access transistor; and

the current limiter comprises a resistor on a source line side of the access transistor.

8. The RRAM circuit of claim 6 , wherein:

the RRAM cell comprises an access transistor and a filament structure on a source line side of the access transistor; and

the current limiter comprises a resistor on a bitline side of the access transistor.

9. The RRAM circuit of claim 6 , wherein:

the current limiter comprises a current mirror coupled to a common supply; and

the control circuit comprises a switch to couple the common supply to the source line.

10. The RRAM circuit of claim 6 , wherein:

the current limiter comprises a current mirror; and

the control circuit comprises a control to couple, during the reset operation, the current mirror to a word line that is coupled to the RRAM cell.

11. The RRAM circuit of claim 6 , wherein the current limiter comprises:

a first current limiter to limit the first current to the bitline during the set operation; and

a second current limiter to limit the first or second current to the source line during the reset operation.

12. The RRAM circuit of claim 11 , wherein:

the first current limiter comprises a first transistor coupled to a second transistor; and

the second current limiter comprises a third transistor coupled to a fourth transistor.

13. The RRAM circuit of claim 12 , wherein:

the first current limiter comprises a set voltage source coupled to the first transistor; and

the second current limiter comprises a current source coupled to the third transistor, wherein a current provided by the current source is limited to a reset current.

14. The RRAM circuit of claim 12 , wherein:

the first current limiter comprises a current source coupled to the first transistor, wherein a current provided by the current source is limited to a set current; and

the second current limiter comprises a reset voltage source coupled to the third transistor.

15. The RRAM circuit of claim 12 , wherein:

the first current limiter comprises a first current source coupled to the first transistor, wherein a first current provided by the first current source is limited to a set current; and

the second current limiter comprises a second current source coupled to the third transistor, wherein a second current provided by the second current source is limited to a reset current.