Solid-state imaging device and method for producing the same, and electronic device
There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.
1. An imaging device, comprising:
a semiconductor substrate having a first side and a second side opposite the first side;
a photoelectric conversion unit on the first side of the semiconductor substrate;
a multilayer wiring layer on the second side of the semiconductor substrate;
a through electrode that extends between the photoelectric conversion unit and the multilayer wiring layer, wherein the through electrode penetrates the multilayer wiring layer between an amplification transistor and a reset transistor.
2. The imaging device of claim 1 , wherein the photoelectric conversion unit includes a lower electrode, and wherein a first end of the through electrode is in direct contact with the lower electrode.
3. The imaging device of claim 2 , wherein the semiconductor substrate includes a light incident surface at the first side of the semiconductor substrate.
4. The imaging device of claim 3 , further comprising an interlayer insulating film between a front surface of the semiconductor substrate and a local wiring layer, wherein the front surface is at the second side of the semiconductor substrate, and wherein the local wiring layer is separated from the front surface of the semiconductor substrate by the interlayer insulating film.
5. The imaging device of claim 3 , further comprising an insulating film between the lower electrode and the light incident surface of the semiconductor substrate.
6. The imaging device of claim 1 , wherein the through electrode is formed from a metal.
7. The imaging device of claim 1 , wherein the through electrode is formed from at least one of Al, Ti, Co, Hf, Ta, Cu, and W.
8. The imaging device of claim 2 , wherein the first end of the through electrode has a width that is greater than a width of a second end of the through electrode.
9. The imaging device of claim 1 , wherein a second end of the through electrode is tapered.
10. The imaging device of claim 1 , further comprising a plurality of pixels, wherein each of the plurality of pixels includes a first photodiode formed in the semiconductor substrate and a second photodiode formed in the semiconductor substrate.
11. An electronic apparatus, comprising: a plurality of pixels, wherein each of the plurality of pixels includes:
a photoelectric conversion unit on a first side of a semiconductor substrate;
at least a first photodiode formed in the semiconductor substrate;
a multilayer wiring layer on a second side of the semiconductor substrate;
a through electrode that extends between the photoelectric conversion unit and the multilayer wiring layer, wherein the through electrode penetrates the multilayer wiring layer between an amplification transistor and a reset transistor.
12. The electronic apparatus of claim 11 , wherein the photoelectric conversion unit includes a lower electrode, and wherein a first end of the through electrode is in direct contact with the lower electrode.
13. The electronic apparatus of claim 11 , wherein the through electrode is formed from at least one of Al, Ti, Co, Hf, Ta, Cu, and W.
14. The electronic apparatus of claim 12 , wherein the first end of the through electrode has a width that is greater than a width of a second end of the through electrode.
15. The electronic apparatus of claim 11 , wherein a second end of the through electrode is tapered.
16. The electronic apparatus of claim 11 , wherein each of the plurality of pixels further includes a second photodiode formed in the semiconductor substrate.