Method for producing semiconductor device
A method for producing a semiconductor device of the present invention includes: step (I) of disposing one or more semiconductor elements each having an active surface, on a thermosetting resin film containing a thermosetting resin composition, such that the thermosetting resin film and the active surfaces of the semiconductor elements come into contact; step (II) of encapsulating the semiconductor elements disposed on the thermosetting resin film with a member for semiconductor encapsulation; step (III) of providing openings in the thermosetting resin film or a cured product thereof after step (II), the openings extending to the active surfaces of the semiconductor elements; and step (IV) of filling the openings with a conductor or forming a conductor layer inside the openings.
1. A method for producing a semiconductor device, the method comprising:
step (pre-I) of providing a composite film including a first resin layer containing a thermosetting resin composition and a second resin layer;
step (I) of disposing one or more semiconductor elements each having an active surface, on the first resin layer of the composite film, such that the first resin layer and the active surfaces of the semiconductor elements come into contact;
step (II) of encapsulating the semiconductor elements disposed on the first resin layer with a member for semiconductor encapsulation;
step (III) of providing openings in the composite film or a cured product thereof after step (II), the openings extending to the active surfaces of the semiconductor elements; and
step (IV) of filling the openings with a conductor or forming a conductor layer inside the openings.
2. The method for producing a semiconductor device according to claim 1 , wherein the composite film is laminated to a support-attached metal foil including a support and a metal foil provided on the support, the composite film being laminated on the metal foil,
in step (III), the support is removed after step (II), and then the openings extending to the active surfaces of the semiconductor elements are provided in the metal foil and the composite film or the cured product thereof.
3. The method for producing a semiconductor device according to claim 2 , wherein a tack force at 25° C. of a surface of the composite film, the surface being in contact with the semiconductor elements, is from 5 gf to 40 gf.
4. The method for producing a semiconductor device according to claim 3 , wherein a dielectric tangent at 5 GHz of the cured product of the composite film is 0.005 or less.
5. The method for producing a semiconductor device according to claim 2 , wherein a dielectric tangent at 5 GHz of the cured product of the composite film is 0.005 or less.
6. The method for producing a semiconductor device according to claim 1 , wherein a tack force at 25° C. of a surface of the composite film, the surface being in contact with the semiconductor elements, is from 5 gf to 40 gf.
7. The method for producing a semiconductor device according to claim 6 , wherein a dielectric tangent at 5 GHz of the cured product of the composite film is 0.005 or less.
8. The method for producing a semiconductor device according to claim 1 wherein a dielectric tangent at 5 GHz of the cured product of the composite film is 0.005 or less.
9. The method for producing a semiconductor device according to claim 1 , wherein the providing of the composite film comprises:
forming the first resin layer on a support; and
forming the second resin layer on the first resin layer.
10. The method for producing a semiconductor device according to claim 1 , wherein the providing of the composite film comprises:
applying a first varnish for the first resin layer on a support;
drying the first varnish to form the first resin layer;
applying a second varnish for the second resin layer on the first resin layer; and
drying the second varnish to form the second resin layer.