Germanium based focal plane array for the short infrared spectral regime
Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.
1. A light detecting structure comprising:
a silicon (Si) base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower truncated pyramid top; and
a germanium (Ge) photodiode formed only on the narrower truncated pyramid top, wherein the Ge photodiode is operable to detect light in a short wavelength infrared (SWIR) range, and wherein the Ge photodiode includes a p-n junction.
2. The light detecting structure of claim 1 , wherein the pyramid bottom is a square of about 10×10 μm 2 .
3. The light detecting structure of claim 1 , wherein the narrower truncated pyramid top is a square of about 1×1 μm 2 .
4. The light detecting structure of claim 1 , wherein the pyramid bottom is a square of about 10×10 μm 2 and wherein the narrower truncated pyramid top is a square of about 1×1 μm 2 .
5. The light detecting structure of claim 1 , wherein the SWIR range includes a wavelength range from about 1000 nm to about 1700 nm.
6. The light detecting structure of claim 1 , further comprising a microlens placed between the pyramid bottom and the incoming light.
7. The light detecting structure of claim 6 , further comprising an anti-reflection layer positioned between the pyramid bottom and the microlens.
8. The light detecting structure of claim 1 , wherein the light detecting structure is repeated spatially to provide a plurality of Ge photodiodes formed on respective narrower truncated pyramid tops to form a focal plane array (FPA).
9. The light detecting structure of claim 8 , further comprising a microlens placed between each pyramid bottom and incoming light.
10. The light detecting structure of claim 9 , further comprising an anti-reflection layer positioned between each pyramid bottom and the respective microlens.
11. The light detecting structure of claim 1 , wherein the Ge photodiode has a height smaller than a height of the Si base.
12. A light detecting structure comprising:
a silicon (Si) base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower truncated pyramid top; and
a germanium (Ge) photodiode formed only on the narrower truncated pyramid top, wherein the Ge photodiode is operable to detect light in a short wavelength infrared (SWIR) range, wherein the Ge photodiode includes a p-i-n junction.
13. The light detecting structure of claim 12 , wherein the pyramid bottom is a square of about 10×10 μm 2 .
14. The light detecting structure of claim 12 , wherein the narrower truncated pyramid top is a square of about 1×1 μm 2 .
15. The light detecting structure of claim 12 , wherein the pyramid bottom is a square of about 10×10 μm 2 and wherein the narrower truncated pyramid top is a square of about 1×1 μm 2 .
16. The light detecting structure of claim 12 , wherein the SWIR range includes a wavelength range from about 1000 nm to about 1700 nm.
17. The light detecting structure of claim 12 , further comprising a microlens placed between the pyramid bottom and incoming light.
18. The light detecting structure of claim 17 , further comprising an anti-reflection layer positioned between the pyramid bottom and the microlens.
19. The light detecting structure of claim 12 , wherein the light detecting structure is repeated spatially to provide a plurality of Ge photodiodes formed on respective narrower truncated pyramid tops to form a focal plane array (FPA).
20. The light detecting structure of claim 12 , further comprising a microlens placed between each pyramid bottom and incoming light.
21. The light detecting structure of claim 20 , further comprising an anti-reflection layer positioned between each pyramid bottom and the respective microlens.
22. The light detecting structure of claim 12 , wherein the Ge photodiode has a height smaller than a height of the Si base.
23. A method, comprising:
forming a silicon (Si) base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower truncated pyramid top; and
forming a germanium (Ge) photodiode only on the truncated pyramid top, wherein the Ge photodiode is operable to detect light in a short wavelength infrared (SWIR) range, and wherein the forming a Ge photodiode only on the narrower truncated pyramid top includes forming a Ge photodiode with a height smaller than a height of the Si base.
24. The method of claim 23 , wherein the forming a Ge photodiode only on the narrower truncated pyramid top includes forming a Ge photodiode with lateral dimensions in a plane perpendicular to incoming light, and wherein an area of the Ge photodiode defined by the lateral dimensions is smaller than an area of the pyramid bottom.
25. The method of claim 23 , wherein the forming a Si base with a pyramidal shape includes forming a plurality of Si bases with pyramidal shapes, and wherein the forming a Ge photodiode only on the narrower truncated pyramid top includes forming a matching plurality of Ge photodiodes formed on respective truncated pyramid tops to form a focal plane array.
26. The method of claim 23 , wherein the pyramid bottom is a square of about 10×10 μm 2 .
27. The method of claim 23 , wherein the narrower truncated pyramid top is a square of about 1×1 μm 2 .
28. The method of claim 23 , wherein the pyramid bottom is a square of about 10×10 μm 2 and wherein the narrower truncated pyramid top is a square of about 1×1 μm 2 .