Sputtering target, magnetic film and method for producing magnetic film
Provided is a sputtering target that can form a magnetic film having both good magnetic separation between magnetic grains and high coercive force at the same time; a magnetic film; and a method for producing a magnetic film. The sputtering target according to the present invention comprises: 1 at. % or more of Zn, a part or all of Zn forming a complex oxide(s) of Zn—Ti—O and/or Zn—Si—O; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, the atomic percentage being based on an atomic ratio.
1. A sputtering target comprising: 1 at. % or more and 20 at. % or less of Zn, a part or all of Zn forming a complex oxide(s) of Zn—Ti—O and/or Zn—Si—O; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, the atomic percentage being based on an atomic ratio.
2. The sputtering target according to claim 1 , wherein the oxide comprises Zn 2 TiO 4 and/or Zn 2 SiO 4 .
3. The sputtering target according to claim 1 , wherein the sputtering target comprises from 1 at. % to 15 at. % of Zn.
4. The sputtering target according to claim 1 , wherein an oxide of at least one element selected from the group consisting of Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti is further formed.
5. The sputtering target according to claim 1 , wherein the sputtering target further comprises 60 at. % or less of at least one selected from the group consisting of Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ru, Si, Sn, Ti, Ta, W, V, and Zn.
6. A magnetic film, comprising: 1 at. % or more and 20 at. % or less of Zn; Ti and/or Si; a part or all of the Zn, Ti, and/or Si being present as an oxide; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, wherein the magnetic film contains an oxide of Zn, Ti, and O, and/or an oxide of Zn, Si, and O.
7. The magnetic film according to claim 6 , wherein the magnetic film comprises 1 at. % or more and 15 at. % or less of Zn.
8. The magnetic film according to claim 6 , wherein an oxide of at least one element selected from the group consisting of Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti is further formed.
9. The magnetic film according to claim 6 , wherein the magnetic film further comprises 60 at. % or less of at least one selected from the group consisting of Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ru, Si, Sn, Ti, Ta, W, V, and Zn.
10. A method for producing a magnetic film, comprising forming a magnetic film by sputtering using the sputtering target according to claim 1 .