Method of producing an optoelectronic element

1. A method of producing an optoelectronic element with a light emitting component, comprising:

arranging a sacrificial layer at least above a part of a light emitting side of the light emitting component,

forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure,

covering the inverted optic structure of the outer surface of the sacrificial layer by a light transparent layer,

transferring the inverted optic structure to an inner side of the light transparent layer, and

removing the sacrificial layer and forming a gap between the light emitting component and the light transparent layer such that the inner side of the light transparent layer comprises an optic structure,

wherein the sacrificial layer comprises a polycarbonate that is at least one selected from the group consisting of polypropylene carbonate, polyethylene carbonate, polycyclohexane carbonate, polycyclohexanepropylene carbonate and polynorbornene carbonate, and the sacrificial layer is evaporated after transferring the inverted optic structure to the optic structure of the light transparent layer by heating up the sacrificial layer to at least a first temperature forming the gap.

2. The method of claim 1 , wherein the inverted optic structure is etched in the sacrificial layer using a mask.

3. The method of claim 1 , wherein the optic structure comprises a Fresnel structure.

4. The method of claim 1 , wherein the optic structure comprises a lens shape.

5. The method of claim 1 , wherein a top surface and/or a side surface of the sacrificial layer is formed with the inverted optic structure.

6. The method of claim 1 , wherein an upper side and side faces of the light emitting component are covered with the sacrificial layer.

7. The method of claim 1 , wherein a tunnel is formed in the light transparent layer, and the evaporated material of the sacrificial layer is ventilated out of the gap via the tunnel.

8. The method of claim 1 , wherein at least one light emitting component is arranged on a carrier, the sacrificial layer is formed on an upper side of the light emitting component and at least on two opposite side faces of the light emitting component, the sacrificial layer is also formed with at least one tunnel section beside the side face of the light emitting component on the carrier with a smaller height, after forming the inverted optic structure in the sacrificial layer and after covering the sacrificial layer by the light transparent layer, the inverted optic structure is transferred to an inner side of the light transparent layer, the at least one tunnel section of the sacrificial layer is removed, and then the sacrificial layer is removed via the at least one tunnel section and the gap is formed between the light emitting component and the light transparent layer.

9. The method of claim 8 , wherein several light emitting components are arranged on the carrier, the sacrificial layer is formed on the upper sides of the light emitting components and at least on two opposite side faces of the light emitting components, the sacrificial layer is also formed with tunnel sections beside the opposite side faces of the light emitting components between two light emitting components on the carrier with a smaller height, one common sacrificial layer is formed in one piece for the light emitting components, after forming the inverted optic structure in the sacrificial layer and after covering the sacrificial layer by the light transparent layer, the inverted optic structure is transferred to an inner side of the light transparent layer, first at least two tunnel sections of the sacrificial layer that adjoin side faces of the light transparent layer are removed, and then the sacrificial layer is removed and the gap is formed between the light emitting components and the light transparent layer via the two tunnel sections.

10. The method of claim 8 , wherein the tunnel sections are formed after deposition of the sacrificial layer by an etching process, stamp molding, compression molding or laser structuring.

11. The method of claim 1 , wherein a light emitting side of the component is covered by a conversion layer before the sacrificial layer is deposited.

12. The optoelectronic element with the light emitting component, wherein at least above the part of the light emitting side of the light emitting component the light transparent layer is arranged, the optic structure is arranged at least at the part of the inner side of the light transparent layer, the inner side is directed to the light emitting component, a tunnel is arranged between the light transparent layer and a basic layer, the tunnel is guided from the gap to an outer side of the transparent layer, and the optoelectronic element is produced according to the method of claim 1 .

13. The optoelectronic element of claim 12 , wherein the light transparent layer comprises molding material, polymer or silicone.

14. The optoelectronic element of claim 12 , wherein the optic structure comprises a Fresnel structure.

15. The optoelectronic element of claim 12 , wherein at least an inner top side of the light transparent layer and/or inner side faces of the light transparent layer have an optic structure.

16. The optoelectronic element of claim 12 , wherein inner side faces of the light transparent layer are arranged at a distance from side faces of the light emitting component, or inner side faces of the light transparent layer are arranged at side faces of the light emitting component.

17. A method of producing an optoelectronic element with a light emitting component, comprising:

arranging a sacrificial layer at least above a part of a light emitting side of the light emitting component,

forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure,

covering the inverted optic structure of the outer surface of the sacrificial layer by a light transparent layer,

transferring the inverted optic structure to an inner side of the light transparent layer, and

removing the sacrificial layer and forming a gap between the component and the light transparent layer such that the inner side of the light transparent layer comprises an optic structure,

wherein the sacrificial layer comprises trimethylolethane.

18. A method of producing an optoelectronic element with a light emitting component, comprising:

arranging a sacrificial layer at least above a part of a light emitting side of the light emitting component,

forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure,

covering the inverted optic structure of the outer surface of the sacrificial layer by a light transparent layer,

transferring the inverted optic structure to an inner side of the light transparent layer, and

removing the sacrificial layer and forming a gap between the light emitting component and the light transparent layer such that the inner side of the light transparent layer comprises an optic structure,

wherein at least one light emitting component is arranged on a carrier, the sacrificial layer is formed on an upper side of the light emitting component and at least on two opposite side faces of the light emitting component, the sacrificial layer is also formed with at least one tunnel section beside the side face of the light emitting component on the carrier with a smaller height, after forming the inverted optic structure in the sacrificial layer and after covering the sacrificial layer by the light transparent layer, the inverted optic structure is transferred to an inner side of the light transparent layer, the at least one tunnel section of the sacrificial layer is removed, and then the sacrificial layer is removed via the at least one tunnel section and the gap is formed between the light emitting component and the light transparent layer.