Perovskite relaxor-PBTI0
Embodiments of the invention can be directed to controlling and/or engineering the size and/or volume of polar nanoregions (PNRs) of ferroelectric polycrystalline material systems. Some embodiments can achieved this via composition modifications to cause changes in the PNRs and/or local structure. Some embodiments can be used to control and/or engineer dielectric, piezoelectric, and/or electromechanical properties of polycrystalline materials. Controlling and/or engineering the PNRs may facilitate improvements to the dielectric, piezoelectric, and/or electromechanical properties of materials. Controlling and/or engineering the PNRs may further facilitate generating a piezoelectric material that may be useful for many different piezoelectric applications.
1. A method for generating a piezoelectric system, the method comprising:
preparing a ferroelectric polycrystalline material having a perovskite crystalline structure having at least one end member, the ferroelectric polycrystalline material including a Pb(M I ,M II )O 3 perovskite structure represented by a general formula Pb 1-x M x [(M I ,M II )] 1-y Ti y O 3 and/or Pb 1-2x/3 M x [(M I ,M II )] 1-y Ti y O 3 ; wherein:
M comprises at least one of La 3+ , Ce 3+ , Pr 3+ , Nd 3+ , Pm 3+ , Sm 3+ , Eu 3+ , Gd 3+ , Tb 3+ , Dy 3+ , Ho 3+ , Er 3+ , Tm 3+ , Yb 3+ , Lu 3+ ;
M I comprises at least one of Mg 2+ , Zn 2+ , Ni 3+ , Yb 3+ , Sc 3+ , In 3+ , Co 3+ , Fe 3+ , Ga 3+ ; and
M II comprises at least one of Ti 4+ , Zr 4+ , Hf 4+ , Sn 4+ , Nb 5+ , Ta 5+ , W 6+ ;
ensuring the at least one of end member comprises a relaxor component with a polarized nanoregion (PNR) by keeping differences in size and valence between M I and M II so as to generate at least one randomly orientated PNR while applying a polarization treatment to the ferroelectric polycrystalline material; and
modifying size and volume of the PNR via composition modifications by doping the ferroelectric polycrystalline material at an A-site and/or a B-site of the Pb(M I ,M II )O 3 Perovskite structure;
wherein:
0<x<0.05; and
0.02<y<0.7.
2. The method recited in claim 1 , wherein the preparing the ferroelectric polycrystalline material comprises preparing at least one of a binary and ternary ferroelectric material systems.
3. The method recited in claim 1 , wherein the preparing the ferroelectric polycrystalline material comprises preparing a relaxor-based ferroelectric material including a general formula (Pb,Bi) 1-x M x [(M I ,M II )O 3 ] 1-y Ti y O 3 , wherein:
0<x<0.05, and
0.02<y<0.7.
4. The method recited in claim 1 , wherein the piezoelectric system has a free dielectric constant >7,000, a clamped dielectric constant ≥2,500, a piezoelectric coefficient d 33 ≥1000 pC/N, and coupling factor k 33 =0.76˜0.80.
5. The method recited in claim 1 , wherein the piezoelectric system has a piezoelectric coefficient d 33 ≥1500 pC/N.
6. The method recited in claim 1 , wherein the piezoelectric system has a piezoelectric coefficient d 33 ≥1100 pC/N, a free dielectric constant >10000, a coupling factor k 33 ≥0.78, and a phase transition temperature >80° C.
7. The method recited in claim 1 , wherein the piezoelectric system has an electric field induced piezoelectric coefficient d 33 *≥1200 pC/N at an applied electric field >2 kV/cm.
8. The method recited in claim 1 , further comprising causing the PNR to form a collinear state with an adjacent matrix of the ferroelectric polycrystalline material.
9. The method recited in claim 1 , further comprising making use of the interfacial energies between rhombohedral and tetragonal PZT layers to enhanced piezoelectricity in PZT superlattices of the ferroelectric polycrystalline material.
10. The method recited in claim 1 , wherein the preparing the ferroelectric polycrystalline material comprises preparing a ferroelectric ceramic.
11. The method recited in claim 1 , wherein the preparing the ferroelectric polycrystalline material comprises preparing a ferroelectric polycrystalline material including at least one of a rhombohedral and/or a tetragonal ferroelectric phase.
12. The method recited in claim 11 , further comprising generating of the PNR so that at least one PNR is formed in, at, or near, at least one of the rhombohedral phase region and the tetragonal ferroelectric phase region.