Carrier substrate with a thick metal interlayer and a cooling structure

1. A carrier substrate ( 1 ) for electrical components ( 13 ), the carrier substrate ( 1 ) having a component side ( 4 ) including conductive paths ( 12 ) and a cooling side ( 5 ), which is opposite the component side ( 4 ) and has a cooling structure ( 30 ), the carrier substrate ( 1 ) has a housing part ( 40 ) encasing the component side ( 4 ) of the carrier substrate ( 1 ), the conductive paths ( 12 ) have a first contact element ( 16 ) to form a conductive path that extends through and out of the housing part ( 40 ), the carrier substrate ( 1 ) comprising, for electrical insulation of the electrical components ( 13 ), a primary layer ( 10 ) which faces the component side ( 4 ) and is produced from ceramic, and, for stiffening the carrier substrate ( 1 ), a secondary layer ( 20 ) which faces the cooling side ( 5 ) and is produced from ceramic, molybdenum, tungsten or a composite materials based on WCu or MoCu, a metallic intermediate layer ( 15 ) being arranged between the primary layer ( 10 ) and the secondary layer ( 20 ) for heat transfer from the component side ( 4 ) to the cooling side ( 5 ), the carrier substrate ( 1 ) forming a sandwich construction, in which the primary layer ( 10 ) and the secondary layer ( 20 ) are separated by the metallic intermediate layer ( 15 ), the intermediate layer ( 15 ) has a second contact element ( 16 ) to form a further conductive path that extends through and out of the housing part ( 40 ), the metallic intermediate layer ( 15 ) being thicker than each of the primary layer ( 10 ) and the secondary layer ( 20 ), wherein the intermediate layer ( 15 ) is thicker than 1 mm, wherein an effective thickness (d30.E) of the cooling structure ( 30 ) is 0.1 to 0.5 times as large as a thickness (b) of the metallic intermediate layer ( 15 ), the effective thickness (d30.E) being an average thickness of the cooling structure ( 30 ), wherein the carrier substrate ( 1 ) is virtually divided into a primary substrate ( 10 ′) and a secondary substrate ( 20 ′), the secondary substrate ( 20 ′) includes the cooling structure ( 30 ), wherein a coefficient of thermal expansion of both of the virtual primary ( 10 ′) and secondary ( 20 ′) substrates be a same or at least the same within a tolerance of +/−10%, wherein the primary layer ( 10 ) extends over an entirety of the component side ( 4 ) of the carrier substrate ( 1 ), and wherein the carrier substrate ( 1 ) has a housing part ( 40 ) encasing the component side ( 4 ) of the carrier substrate ( 1 ).

2. The carrier substrate ( 1 ) according to claim 1 , wherein the metallic intermediate layer ( 15 ) is between 2.5 and 100 times as thick as the primary layer ( 10 ) and between 2.5 and 100 times as thick as the secondary layer ( 20 ).

3. The carrier substrate ( 1 ) according to claim 1 , wherein the metallic intermediate layer ( 15 ) is between 1.4 mm and 10 mm thick.

4. The carrier substrate ( 1 ) according to claim 1 , wherein the cooling structure ( 30 ) comprises a base body region (B 1 ) and a rip region (S 1 ), and wherein a ratio (SD/BD) between a thickness (SD) of the rip region (S 1 ) and a thickness (BD) of the base body region (B 1 ) has a value between 1.2 to 3.

5. The carrier substrate ( 1 ) according to claim 4 , wherein the ratio (SD/BD) has the value between 1.6 to 2.5.

6. The carrier substrate ( 1 ) according to claim 1 , wherein the metallic intermediate layer ( 15 ) is formed as a single layer.

7. The carrier substrate ( 1 ) according to claim 1 , wherein the cooling structure ( 30 ) is configured for fluid cooling, and at an end of the carrier substrate ( 1 ) on the cooling side ( 5 ), the cooling structure ( 30 ) is directly adjacent to the secondary layer ( 20 ).

8. The carrier substrate ( 1 ) according to claim 1 , the metallic intermediate layer ( 15 ), the conductive paths ( 12 ), a contact element ( 16 ), and/or the cooling structure ( 30 ) have etched structures on aside facing the primary layer ( 10 ) or a side facing the secondary layer ( 20 ) for increasing a thermal shock resistance of the carrier substrate ( 1 ).

9. The carrier substrate ( 1 ) according to claim 1 , wherein the housing part ( 40 ) is a cast part and ends flush with the cooling structure ( 30 ) arranged on the cooling side ( 5 ).

10. A method for producing a carrier substrate ( 1 ) according to claim 1 , wherein the primary layer ( 10 ), the secondary layer ( 20 ), the intermediate layer ( 15 ) and the cooling structure ( 30 ) are joined by a common joining method.

11. The method for producing the carrier substrate ( 1 ) according to claim 10 , wherein the primary layer ( 10 ), the secondary layer ( 20 ), the intermediate layer ( 15 ), the cooling structure ( 30 ), and the conductive paths ( 12 ) are joined by the common joining method simultaneously in a common method step.

12. A carrier substrate ( 1 ) for electrical components ( 13 ), the carrier substrate ( 1 ) having a component side ( 4 ) including conductive paths ( 12 ) and a cooling side ( 5 ), which is opposite the component side ( 4 ) and has a cooling structure ( 30 ), the carrier substrate ( 1 ) has a housing part ( 40 ) encasing the component side ( 4 ) of the carrier substrate ( 1 ), the conductive paths ( 12 ) have a first contact element ( 16 ) to form a conductive path that extends through and out of the housing part ( 40 ), the carrier substrate ( 1 ) comprising, for electrical insulation of the electrical components ( 13 ), a primary layer ( 10 ) which faces the component side ( 4 ) and is produced from ceramic, and, for stiffening the carrier substrate ( 1 ), a secondary layer ( 20 ) which faces the cooling side ( 5 ) and is produced from ceramic, molybdenum, tungsten or a composite materials based on WCu or MoCu, a metallic intermediate layer ( 15 ) being arranged between the primary layer ( 10 ) and the secondary layer ( 20 ) for heat transfer from the component side ( 4 ) to the cooling side ( 5 ), the carrier substrate ( 1 ) forming a sandwich construction, in which the primary layer ( 10 ) and the secondary layer ( 20 ) are separated by the metallic intermediate layer ( 15 ), the intermediate layer ( 15 ) has a second contact element ( 16 ) to form a further conductive path that extends through and out of the housing part ( 40 ), the metallic intermediate layer ( 15 ) being thicker than each of the primary layer ( 10 ) and the secondary layer ( 20 ), wherein the intermediate layer ( 15 ) is thicker than 1 mm, wherein an effective thickness (d30.E) of the cooling structure ( 30 ) is 0.1 to 0.5 times as large as a thickness (b) of the metallic intermediate layer ( 15 ), the effective thickness (d30.E) being an average thickness of the cooling structure ( 30 ), wherein the cooling structure ( 30 ) comprises a base body region (B 1 ) and a rip region (S 1 ), wherein a ratio (SD/BD) between a thickness (SD) of the rip region (S 1 ) and a thickness (BD) of the base body region (B 1 ) has a value between 1.6 to 3, and wherein the primary layer ( 10 ) extends over an entirety of the component side ( 4 ) of the carrier substrate ( 1 ).

13. The carrier substrate ( 1 ) according to claim 12 , wherein the ratio (SD/BD) has the value between 1.6 to 2.5.