IP Library Granted Patent US 11,335,533
Granted Patent B2
US 11,335,533 · App. 16/474,846 · Granted May 17, 2022

Charged particle beam device

Inventors: Akito Tanokuchi (Tokyo, JP); Seiichiro Kanno (Tokyo, JP); Kei Shibayama (Ibaraki, JP)
Assignee: Hitachi High-Tech Corporation
H01J37/20H01J37/28H01J2237/202H01J2237/2007
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Quick Facts
Patent No.
US 11,335,533
App. No.
16/474,846
Granted
May 17, 2022
Kind
B2
Abstract

The purpose of the present invention is to provide a charged particle beam device which suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. Proposed is a charged particle beam device which has an electrostatic chuck mechanism, the charged particle beam device being provided with: a stage ( 200 ) which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam; an insulating body ( 203 ) which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck; a first support member ( 402 ) which supports the insulating body on the stage; a ring-shaped electrode ( 400 ) which encloses the surroundings of the sample and is installed on the insulating body in a contactless manner, and to which a predetermined voltage is applied; and a second support member ( 405 ) which supports the ring-shaped electrode.

Claims (30)

1. A charged particle beam device including an electrostatic chuck mechanism, the charged particle beam device comprising:

a stage which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam;

an insulating body which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck;

a first support member which supports the insulating body on the stage;

a ring-shaped electrode which encloses the surroundings of the sample and is not in contact with the insulating body, and to which a predetermined voltage is applied; and

a second support member which supports the ring-shaped electrode at a position different from the first support member on the stage.

2. The charged particle beam device according to claim 1 , further comprising a control device which controls a power supply applying a voltage to the ring-shaped electrode, wherein

the control device applies a voltage corresponding to the irradiation position of the charged particle beam based on information stored in a storage medium.

3. The charged particle beam device according to claim 1 , wherein

the first support member and the second support member are columnar members disposed on the stage.

4. The charged particle beam device according to claim 1 , wherein

a ring-shaped plate-like body having a flat surface is disposed between the ring-shaped electrode and the second support member.

5. The charged particle beam device according to claim 4 , wherein

the ring-shaped plate-like body is formed of a material containing a ceramic.

6. A charged particle beam device including an electrostatic chuck mechanism, the charged particle beam device comprising:

a stage which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam;

a ceramic which is supported by a first support member at a first position on the stage and constitutes a dielectric layer of the electrostatic chuck; and

a ring-shaped electrode which is supported by a second support member at a second position different from the first position on the stage and encloses the surroundings of the sample, and to which a predetermined voltage is applied, wherein

the ring-shaped electrode is made of a mixture of aluminum and metal silicon.

7. The charged particle beam device according to claim 6 , wherein

the ring-shaped electrode is subjected to metal plating.

8. The charged particle beam device according to claim 7 , wherein

a metal used for the metal plating is nickel.

9. A charged particle beam device including an electrostatic chuck mechanism, the charged particle beam device comprising:

a stage which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam;

a ceramic which is supported by a first support member at a first position on the stage and constitutes a dielectric layer of the electrostatic chuck; and

a ring-shaped electrode which is supported by a second support member at a second position different from the first position on the stage and encloses the surroundings of the sample, and to which a predetermined voltage is applied, wherein

the ring-shaped electrode is subjected to metal plating.

10. The charged particle beam device according to claim 9 , wherein

a metal used for the metal plating is nickel.

Assignments (2)
CHANGE OF NAME Recorded Apr 14, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052398/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2019
From: TANOKUCHI, AKITO; KANNO, SEIICHIRO; SHIBAYAMA, KEI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 049643/0870 →
Continuity (1)
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