Charged particle detector and charged particle beam apparatus
The disclosure provides a charged particle detector including a scintillator that emits light with stable intensity and obtains high light emission intensity regardless of an energy of an incident electron. The disclosure provides the charged particle detector including: a first light-emitting part ( 21 ) in which a layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and a layer containing GaN are alternately laminated; a second light-emitting part ( 23 ) in which the layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and the layer containing GaN are alternately laminated; and a non-light-emitting part ( 22 ) that is interposed between the first light-emitting part ( 21 ) and the second light-emitting part ( 23 ) (see FIG. 2 ).
1. A charged particle detector that detects a charged particle obtained by irradiating a sample with a charged particle beam, the charged particle detector comprising:
a light emitting structure on which a charged particle to be detected is incident, including
a first light-emitting part in which a layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and a layer containing GaN are alternately laminated;
a second light-emitting part in which a layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and a layer containing GaN are alternately laminated; and
a non-light-emitting part that is interposed between the first light-emitting part and the limitation the second light-emitting part, wherein the non-emitting part is a layer containing GaN that is thicker than one GaN layer included in the first and second light-emitting parts.
2. The charged particle detector according to claim 1 , wherein
a total thickness of a portion including the first light-emitting part, the second light-emitting part, and the non-light-emitting part is 30 nm to 10000 nm, and a thickness of the non-light-emitting part is 10 nm to 5000 nm.
3. The charged particle detector according to claim 1 , wherein
a total thickness of a portion including the first light-emitting part, the second light-emitting part, and the non-light-emitting part is 50 nm to 1000 nm, and a thickness of the non-light-emitting part is 20 nm to 500 nm.
4. A charged particle beam apparatus comprising:
a charged particle detector that detects a charged particle obtained by irradiating a sample with a charged particle beam, wherein
the charged particle detector comprising a light emitting structure on which a charged particle to be detected is incident, including:
a first light-emitting part in which a layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and a layer containing GaN are alternately laminated;
a second light-emitting part in which the layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and the layer containing GaN are alternately laminated; and
a non-light-emitting part that is interposed between the first light-emitting part and the limitation the second light-emitting part, wherein the non-emitting part is a layer containing GaN that is thicker than one GaN layer included in the first and second light-emitting parts.
5. A mass analysis apparatus comprising:
a mass separation unit that performs mass separation on an ion; and
a detector that detects the ion separated by the mass separation unit, wherein
the detector comprises a light emitting structure on which an ion to be detected is incident, including:
a first light-emitting part in which a layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and a layer containing GaN are alternately laminated;
a second light-emitting part in which a layer containing Ga 1-x-y Al x In y N (where 0≤x<1, 0≤y<1) and a layer containing GaN are alternately laminated; and
a non-light-emitting part that is interposed between the first light-emitting part and the limitation the second light-emitting part, wherein the non-emitting part is a layer containing GaN that is thicker than one GaN layer included in the first and second light-emitting parts.