Support for a semiconductor structure
A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns positioned on the first insulating layer.
1. A support for a semiconductor structure, comprising:
a base substrate;
a first silicon dioxide insulating layer positioned on the base substrate, the first silicon dioxide insulating layer having a thickness greater than 20 nm; and
a charge trapping layer positioned on the first silicon dioxide insulating layer, the charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns.
2. The support of claim 1 , wherein the charge trapping layer comprises alternating layers of polycrystalline silicon and silicon dioxide.
3. The support of claim 1 , wherein the thickness of the charge trapping layer is greater than 10 microns.
4. The support of claim 1 , wherein the charge trapping layer comprises amorphous or porous silicon.
5. The support of claim 1 , wherein the base substrate has a resistivity lower than 1000 ohm·cm.
6. The support of claim 1 , wherein the base substrate has a resistivity higher than 1000 ohm·cm.
7. A semiconductor structure, comprising:
a support according to claim 1 ;
an insulating layer on the support; and
a useful layer on the insulating layer.
8. The semiconductor structure of claim 7 , wherein the useful layer comprises at least one integrated device.
9. The support of claim 1 , wherein the charge trapping layer comprises polycrystalline silicon.
10. The support of claim 9 , wherein the polycrystalline silicon comprises silicon grains having dimensions between 10 and 900 nm.
11. The support of claim 9 , wherein the polycrystalline silicon is rich in carbon.
12. The support of claim 11 , wherein the polycrystalline silicon comprises silicon grains having dimensions between 10 and 900 nm.
13. The support of claim 12 , wherein the charge trapping layer comprises alternating layers of polycrystalline silicon and silicon dioxide.
14. The support of claim 12 , wherein the thickness of the charge trapping layer is greater than 10 microns.
15. The support of claim 12 , wherein the charge trapping layer comprises amorphous or porous silicon.
16. The support of claim 1 , further comprising a second insulating layer on the charge trapping layer.
17. The support of claim 1 , wherein the base substrate comprises quartz, glass sapphire.
18. The support of claim 12 , wherein the base substrate has a resistivity lower than 1000 ohm·cm.
19. The support of claim 12 , wherein the base substrate has a resistivity higher than 1000 ohm·cm.
20. The support of claim 1 , wherein the base substrate comprises silicon.