Array substrate, display panel, display apparatus and preparation method therefor

1. An array substrate, comprising:

a base substrate; and

at least one pixel element on one side of the base substrate, each of the at least one of pixel element comprises: a thin film transistor, an electroluminescence structure and a light-shielding structure between the thin film transistor and the base substrate;

wherein, the thin film transistor comprises a drain and an active layer;

at least one insulation layer on one side of the base substrate near the at least one of pixel element; wherein a surface of the at least one insulation away from the base substrate comprises a recessed portion, and the electroluminescence structure is in the recessed portion;

each of the at least one of pixel element comprises a light-emitting area, and a circuit area adjacent to the light-emitting area; wherein the thin film transistor is in the circuit area, and the electroluminescence structure is in the light-emitting area;

the active layer is between the base substrate and the at least one insulation layer;

the drain is on one side of the at least one insulation layer away from the base substrate, and the drain covers at least a portion of a sidewall of the recessed portion for preventing light emitted by the electroluminescence structure from being incident on the active layer;

wherein the electroluminescence structure comprises a first electrode configured to drive the pixel element and one of the light-shielding structure and the active layer is at a same layer as the first electrode.

2. The array substrate according to claim 1 , wherein the drain covers all of the sidewall of the recessed portion.

3. The array substrate according to claim 1 , wherein the at least one insulation layer comprises an interlayer insulation layer, and the recessed portion penetrates through the interlayer insulation layer.

4. The array substrate according to claim 3 , wherein,

the electroluminescence structure comprises a first electrode;

the first electrode is on the bottom of the recessed portion near the base substrate; and

the first electrode and the active layer are in a same layer and are made of a same material.

5. The array substrate according to claim 1 , wherein the at least one insulation layer comprises an interlayer insulation layer and a buffer layer;

wherein the buffer layer is between the interlayer insulation and the base substrate, and the recessed portion penetrates through the interlayer insulation layer and the buffer layer.

6. The array substrate according to claim 5 , further comprising:

a light-shielding layer between the buffer layer and the base substrate;

wherein an orthographic projection of the light-shielding layer on the base substrate overlaps with a part of or all of an orthographic projection of the active layer on the base substrate, and the light-shielding layer is configured to prevent light from being incident on the active layer;

wherein the electroluminescence structure comprises a first electrode, the first electrode is on the bottom of the recessed portion near the base substrate, and the first electrode and the light-shielding layer are in a same layer and are made of a same material.

7. The array substrate according to claim 1 , further comprising:

an organic layer between the base substrate and the at least one insulation layer, wherein the light-shielding structure is between the organic layer and the base substrate;

wherein an orthographic projection of the light-shielding structure on the base substrate overlaps with a part of or all of an orthographic projection of the active layer on the base substrate, and the light-shielding structure is configured to prevent light from being incident on the active layer.

8. The array substrate according to claim 1 , the light-shielding structure comprises: a filter structure between the thin film transistor and the base substrate, and a light-shielding layer between the filter structure and the thin film transistor; and

the first electrode and the light-shielding layer are at the same layer.

9. The array substrate according to claim 8 , wherein the filter structure comprises one or a combination of:

a first color filter on the base substrate;

a second color filter on one side of the first color filter away from the base substrate; or

a third color filter on one side of the second color filter away from the base substrate.

10. The array substrate according to claim 1 , wherein on the condition that the first electrode and the active layer are at the same layer, the light-shielding structure comprises one or a combination of:

a first color filter on the base substrate;

a second color filter on one side of the first color filter away from the base substrate; or

a third color filter on one side of the second color filter away from the base substrate.

11. The array substrate according to claim 1 , wherein the array substrate further comprises a first color filter or a second color filter or a third color filter between the electroluminescence structure and the base substrate.

12. The array substrate according to claim 1 , wherein the electroluminescence structure further comprises: a second electrode opposite to the first electrode, and a light-emitting layer between the first electrode and the second electrode.

13. The array substrate according to claim 12 , wherein the thin film transistor further comprises a source-drain layer on one side of the active layer away from the base substrate; wherein the source-drain layer is higher than the light-emitting layer on a plane parallel to the base substrate.

14. The array substrate according to claim 13 , wherein the array substrate further comprises a layer structure between the second electrode and the source-drain layer, wherein the layer structure is a passivation layer and a pixel definition layer.

15. A display panel, comprising the array substrate according to claim 1 .

16. A display device, comprising the display panel according to claim 15 .