Solid-state imaging element and electronic equipment
The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.
1. A solid-state imaging element, comprising:
a photoelectric conversion section disposed in a semiconductor substrate;
a trench disposed in the semiconductor substrate, wherein the trench surrounds the photoelectric conversion section in a plan view, wherein the trench includes a protruding section having a shape protruding toward the photoelectric conversion section in the plan view, and wherein a position of the protruding section in each pixel varies according to each pixel color in the plan view; and
a region between the trench and the photoelectric conversion section, the region being different in conductivity type from the photoelectric conversion section.
2. The solid-state imaging element according to claim 1 , wherein the solid-state imaging element includes a plurality of pixels, wherein each pixel includes a photo-electric conversion section, and wherein the trench is formed in a grid pattern such that the photoelectric conversion section for each pixel is separated from every other pixel in the plan view by the trench.
3. The solid-state imaging element according to claim 2 , wherein
a length of the trench in a depth direction is different between the protruding section and a side of the grid pattern.
4. The solid-state imaging element according to claim 2 , wherein
a side of the grid pattern of the trench has a linear shape.
5. The solid-state imaging element according to claim 1 , wherein
the trench includes at least one of a material having a refractive index lower than the photoelectric conversion section or a light reflection material.
6. The solid-state imaging element according to claim 1 , wherein
the trench includes a deep trench isolation (DTI) formed on a substrate from a light incident surface side.
7. The solid-state imaging element according to claim 1 , wherein
the trench includes a deep trench isolation (DTI) formed on the substrate from a surface side opposite to a light incident surface.
8. The solid-state imaging element according to claim 1 , wherein
the protruding section included in the trench varies in length according to each pixel color.
9. The solid-state imaging element according to claim 1 , wherein
the protruding section included in the trench varies in width according to each pixel color.
10. The solid-state imaging element according to claim 1 , wherein
the protruding section included in the trench varies in number according to each pixel color.
11. The solid-state imaging element according to claim 1 , wherein
the solid-state imaging element is a back-illuminated type.
12. A solid-state imaging element, comprising:
a photoelectric conversion section disposed in a semiconductor substrate;
a trench disposed in the semiconductor substrate, wherein the trench surrounds the photoelectric conversion section in a plan view, wherein the trench includes a protruding section having a shape protruding toward the photoelectric conversion section in the plan view, and wherein the protruding section included in the trench varies according to a pattern of a shared pixel; and
a region between the trench and the photoelectric conversion section, the region being different in conductivity type from the photoelectric conversion section.
13. The solid-state imaging element according to claim 12 , wherein
the protruding section included in the trench varies in length according to the pattern of the shared pixel.
14. The solid-state imaging element according to claim 12 , wherein
the protruding section included in the trench varies in width according to the pattern of the shared pixel.
15. The solid-state imaging element according to claim 12 , wherein
the protruding section included in the trench varies in number according to the pattern of the shared pixel.
16. A solid-state imaging element, comprising:
a photoelectric conversion section formed in each pixel;
a grid-patterned inter-pixel separation section separating the photoelectric conversion section of each pixel;
a columnar protruding section formed inside the photoelectric conversion section; and
a well region between the inter-pixel separation section and the protruding section, and between the inter-pixel separation section and the photoelectric conversion section, the well region being different in conductivity type from the photoelectric conversion section.
17. The solid-state imaging element according to claim 16 , wherein
the protruding section includes at least one of a material having a refractive index lower than the photoelectric conversion section or a light reflection material.
18. The solid-state imaging element according to claim 16 , wherein
the protruding section includes a deep trench isolation (DTI) formed on a substrate from a light incident surface side, and
the inter-pixel separation section includes a DTI formed on the substrate from a surface side opposite to a light incident surface.
19. The solid-state imaging element according to claim 16 , wherein
the protruding section has a cylindrical shape.
20. The solid-state imaging element according to claim 16 , wherein
the protruding section has a polygonal column shape.
21. Electronic equipment, comprising:
a solid-state imaging element, wherein
the solid-state imaging element includes:
a photoelectric conversion section formed in each pixel;
a grid-patterned inter-pixel separation section separating the photoelectric conversion section of each pixel;
a columnar protruding section formed inside the photoelectric conversion section; and
a well region between the inter-pixel separation section and the protruding section, and between the inter-pixel separation section and the photoelectric conversion section, the well region being different in conductivity type from the photoelectric conversion section.