Chemical-vapor-deposition silicon carbide bulk having improved etching characteristic
In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H 2 ), and nitrogen (N 2 ) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×10 18 atoms/cm 3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.
1. A chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic, comprising:
silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (met yltrichlorosilane), hydrogen (H 2 ), and nitrogen (N 2 ) gases,
wherein the SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method, five peaks having a reference code of 03-065-0360 and at least one peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×10 18 atoms/cm 3 or more at a depth of 1,500 nm or more from a surface of the bulk, which is a metastable layer,
wherein comb patterns are formed in grains of the carbide bulk,
wherein an area ratio of comb patterns in grains of the bulk is 50% or more.
2. A chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic, comprising:
silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H 2 ), and nitrogen (N 2 ) gases,
wherein the SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method, five peaks having a reference code of 03-065-0360 and at least one peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a resistance value of the silicon carbide is 0.3 Ω or less,
wherein grains are present in the carbide bulk and comb patterns are formed in the grains,
wherein an average grain size is about 40 to 100 μm.
3. A chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic, comprising:
silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H 2 ), and nitrogen (N 2 ) gases,
wherein the SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method, five peaks having a reference code of 03-065-0360 and at least one peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a resistance value of the silicon carbide is 1 Ω or less,
wherein an average grain size is about 40 to 100 μm when crystal grains are generated.