Broadband absorbers via nanostructures
The document discloses transferrable hyperbolic metamaterial particles (THMMP) that display broadband, selective, omnidirectional absorption and can be transferred to secondary substrates, allowing enhanced flexibility and selective transmission. A device having metamaterial nanostructures includes a substrate and metamaterial nanostructures engaged to the substrate to form an optical layer to interact with light incident to the optical layer to exhibit optical reflection or absorption or transmission that is substantially uniform over a spectral range of different optical wavelengths associated with materials and structural features of the metamaterial nanostructures, each metamaterial nanostructure including different material layers that are interleaved to form a multi-layer nanostructure.
1. A device having metamaterial nanostructures, comprising:
a substrate; and
metamaterial nanostructures engaged to the substrate to form an optical layer to interact with light incident to the optical layer to exhibit optical reflection or absorption or transmission that is substantially uniform over a spectral range of different optical wavelengths associated with materials and structural features of the metamaterial nanostructures, each metamaterial nanostructure including different material layers that are interleaved to form a multi-layer nanostructure,
wherein the different material layers in at least one of the metamaterial nanostructures are concentric layers around a center to form a sphere.
2. The device as in claim 1 , wherein the different material layers in at least one of the metamaterial nanostructures are concentric layers around an axis to form a cylinder and wherein the axis of the cylinder is perpendicular to a local contact area with the substrate.
3. The device as in claim 2 , wherein the substrate is a flexible substrate to permit bending of the optical layer.
4. The device as in claim 2 , wherein the different material layers include semiconductor and dielectric materials and the substrate is a polymer material.
5. The device as in claim 4 , wherein the semiconductor material includes Transparent Conduction Oxide (TCO), Doped Oxide, Aluminum Zinc Oxide (AZO), Indium Tin Oxide (ITO), or Titanium Nitride (TiN).
6. The device as in claim 4 , wherein the dielectric material includes Oxide (ZnO), Aluminum Nitride (AlN), or Scandium Nitride (ScN).
7. The device as in claim 2 , wherein the different material layers include semiconductor and dielectric layers.
8. A device having metamaterial nanostructures, comprising:
a substrate that is flexible; and
an array of metamaterial nanopillars attached to the substrate to form an optical layer, each metamaterial nanopillar including alternating semiconductor and dielectric layers to exhibit a plasmonic response to incident light to exhibit optical reflection or absorption or transmission that is substantially uniform over a spectral range of different optical wavelengths associated with materials and structural features of the metamaterial nanopillars,
wherein each nanopillar is a hollow cylinder with a center void as a tube.
9. The device as in claim 8 , wherein the array of metamaterial nanopillars further includes a nanopillar that is a solid cylinder.
10. The device as in claim 8 , wherein the substrate is a polymer material.
11. The device as in claim 8 , wherein the semiconductor layer includes Transparent Conduction Oxide (TCO), Doped Oxide, Aluminum Zinc Oxide (AZO), Indium Tin Oxide (ITO), or Titanium Nitride (TiN).
12. The device as in claim 8 , wherein the dielectric layer includes Zinc Oxide (ZnO), Aluminum Nitride (AlN), or Scandium Nitride (ScN).
13. The device as in claim 1 , wherein the substrate is a flexible substrate to permit bending of the optical layer.
14. The device as in claim 1 , wherein the different material layers include semiconductor and dielectric materials and the substrate is a polymer material.
15. The device as in claim 14 , wherein the semiconductor material includes Transparent Conduction Oxide (TCO), Doped Oxide, Aluminum Zinc Oxide (AZO), Indium Tin Oxide (ITO), or Titanium Nitride (TiN).
16. The device as in claim 15 , wherein the dielectric material includes Oxide (ZnO), Aluminum Nitride (AlN), or Scandium Nitride (ScN).