Radiation-emitting semiconductor body and semiconductor chip
A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.
1. A radiation-emitting semiconductor body having a semiconductor layer sequence comprising an active region that generates radiation, an n-conducting region and a p-conducting region, wherein
the active region is located between the n-conducting region and the p-conducting region;
the p-conducting region comprises a current expansion layer based on a phosphide compound semiconductor material;
the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites;
the p-conducting region has a subregion between the current expansion layer and the active region, and the subregion is p-conductively doped with a second dopant different from the first dopant;
a superlattice structure is disposed between the current expansion layer and the active region,
the superlattice structure comprises a plurality of first sublayers and a plurality of second sublayers, the first sublayers and the second sublayers are formed from materials that are different from each other, and
the first sublayers are formed with GaP and the second sublayers are formed with AlInP.
2. The radiation-emitting semiconductor body according to claim 1 , wherein the first dopant is a Group IV element.
3. The radiation-emitting semiconductor body according to claim 1 , wherein the first dopant is carbon.
4. The radiation-emitting semiconductor body according to claim 1 , wherein the current expansion layer is lattice-mismatched with respect to a semiconductor material adjacent to a side facing the active region and is partially or completely relaxed.
5. The radiation-emitting semiconductor body according to claim 1 , wherein the current expansion layer comprises Al x In y Ga 1-x-y P with 0≤x≤0.05 and 0≤y≤0.05.
6. The radiation-emitting semiconductor body according to claim 5 , wherein x=0 and y=0.
7. The radiation-emitting semiconductor body according to claim 1 , wherein the second dopant is incorporated at Group III lattice sites.
8. A radiation-emitting semiconductor chip comprising the semiconductor body according to claim 1 , wherein the semiconductor chip comprises a carrier on which the semiconductor body is disposed.
9. The radiation-emitting semiconductor chip according to claim 8 , further comprising a mirror layer disposed between the carrier and the semiconductor body.
10. The radiation-emitting semiconductor chip according to claim 8 , wherein the carrier is transparent to the radiation generated in the active region and, during operation of the semiconductor chip, at least some of the radiation exits through the carrier.