Radiation-emitting device
A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.
1. A radiation-emitting device comprising:
a semiconductor layer sequence having an active layer that emits a primary radiation during operation,
a decoupling surface on a surface of said semiconductor layer sequence,
a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and
a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein
the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material,
wherein mixed light of unconverted primary and converted secondary radiation is emitted at the decoupling surface.
2. The radiation-emitting device according to claim 1 , wherein the electrically conductive matrix material is selected from the group consisting of doped and undoped metal oxides, doped and undoped metal halides, electrically conductive polymers, polymers charged with electrically conductive particles, and polymers charged with electrically conductive salts.
3. The radiation-emitting device according to claim 1 , wherein the refractive index of the electrically conductive matrix material is variable.
4. The radiation-emitting device according to claim 1 , wherein the wavelength conversion layer has a thickness of less than or equal to 30 μm.
5. The radiation-emitting device according to claim 1 , wherein the at least one conversion material is nanodisperse.
6. The radiation-emitting device according to claim 1 , wherein the at least one conversion material in the wavelength conversion layer has a concentration of less than or equal to 100 mol %.
7. The radiation-emitting device according to claim 6 , wherein the at least one conversion material in the wavelength conversion layer has a concentration of equal to or more than 0.01 mol %.
8. The radiation-emitting device according to claim 1 , wherein the at least one conversion material is selected from the group consisting of quantum dots, quantum dots enclosed in an inorganic matrix, organometallic frameworks and organometallic complexes.
9. The radiation-emitting device according to claim 1 , wherein the wavelength conversion layer comprises an absorbent material that absorbs wavelengths in the blue spectral region.
10. The radiation-emitting device according to claim 9 , wherein the absorbent material is chemically bonded to a conversion material.
11. The radiation-emitting device according to claim 1 , wherein the wavelength conversion layer has a roughened surface on the side facing away from the semiconductor layer sequence.
12. The radiation-emitting device according to claim 11 , further comprising a planarization layer between the roughened surface and the mirror layer.
13. The radiation-emitting device according to claim 12 , wherein the planarization layer contains or consists of SiO 2 .
14. The radiation-emitting device according to claim 1 , further comprising an encapsulation surrounding at least the wavelength conversion layer and the mirror layer.
15. The radiation-emitting device according to claim 14 , wherein the encapsulation comprises metallic or dielectric material.
16. The radiation-emitting device according to claim 1 , the encapsulation having a thickness less than or equal to 1 μm.
17. The radiation-emitting device according to claim 14 , wherein the encapsulation has a thickness of 50 nm to 500 nm.
18. The radiation-emitting device according to claim 1 , wherein the mirror layer comprises a metal layer.
19. A radiation-emitting device comprising:
a semiconductor layer sequence having an active layer that emits a primary radiation during operation,
a decoupling surface on a surface of said semiconductor layer sequence,
a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation,
a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein
the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material,
the wavelength conversion layer has a roughened surface on the side facing away from the semiconductor layer sequence, and
wherein mixed light of unconverted primary and converted secondary radiation is emitted at the decoupling surface.