Optoelectronic semiconductor component
An optoelectronic semiconductor component includes a semiconductor layer sequence that generates radiation, the semiconductor layer sequence has an emission side and a rear side opposite said emission side, a mirror for the generated radiation on the rear side, a carrier that is transmissive to the radiation generated, on the emission side, and a reflector housing on side surfaces of the carrier, the reflector housing is impermeable to the generated radiation and configured for diffuse reflection of generated radiation and includes a radiation exit opening, wherein at least one of a width of an opening in the reflector housing and an area of the radiation exit opening decrease(s) in a direction away from the emission side, and a maximum emission of the generated radiation takes place in an emission angle range of 30° to 60°, relative to a perpendicular to the emission side.
1. An optoelectronic semiconductor component comprising:
a semiconductor layer sequence that generates radiation, the semiconductor layer sequence has an emission side and a rear side opposite said emission side,
a mirror for the generated radiation on the rear side,
a carrier that is transmissive to the radiation generated, on the emission side, and
a reflector housing directly on side surfaces of the carrier, the reflector housing is impermeable to the generated radiation and configured for diffuse reflection of generated radiation and comprises a radiation exit opening,
wherein at least one of a width of an opening in the reflector housing and an area of the radiation exit opening decrease(s) in a direction away from the emission side, and
a maximum emission of the generated radiation takes place in an emission angle range of 30° to 60°, relative to a perpendicular to the emission side.
2. The optoelectronic semiconductor component according to claim 1 , wherein the side surfaces of the carrier are covered completely by the reflector housing, and the carrier is shaped as a symmetrical trapezoid when viewed in cross section.
3. The optoelectronic semiconductor component according to claim 1 , wherein
the carrier is a growth substrate of the semiconductor layer sequence,
the carrier terminates flush with the reflector housing in the direction away from the emission side, and
the semiconductor layer sequence is electrically contacted by the mirror.
4. The optoelectronic semiconductor component according to claim 1 , wherein, when viewed in cross section, a quotient of a width (W) of the radiation exit opening and a width (B) of the emission side is 0.5 to 0.7.
5. The optoelectronic semiconductor component according to claim 4 , wherein a quotient of a height (H) of the reflector housing and the width (B) of the emission side is 0.2 to 0.8.
6. The optoelectronic semiconductor component according to claim 1 , wherein a mean angle (a) of inner sides of the reflector housing to the emission side is 60° to 75°.
7. The optoelectronic semiconductor component according to claim 1 , wherein the maximum emission of the generated radiation takes place in the emission angle range of 40° to 55°, relative to the perpendicular to the emission side.
8. The optoelectronic semiconductor component according to claim 1 , further comprising a connection platform impermeable to the generated radiation and has electrical lines that contact the semiconductor layer sequence, wherein the mirror, the semiconductor layer sequence, the carrier and the reflector housing are mounted on the connection platform.
9. The optoelectronic semiconductor component according to claim 1 , wherein the reflector housing surrounds the semiconductor layer sequence and the mirror all around and terminates flush with the mirror on the rear side.
10. The optoelectronic semiconductor component according to claim 1 , wherein the reflector housing, viewed in cross section, has a rectangular outer contour line.
11. The optoelectronic semiconductor component according to claim 1 , wherein the reflector housing is made of a silicone provided with light-scattering titanium dioxide particles so that the reflector housing is white.
12. The optoelectronic semiconductor component according to claim 1 , wherein the emission side and the radiation exit opening, as viewed in plan view, are a square shape, and the carrier has the shape of a truncated square pyramid.
13. The optoelectronic semiconductor component according to claim 1 , wherein a light entry side of the carrier, facing the emission side, is provided with a structuring that improves coupling the generated radiation into the carrier, and the carrier is smooth on a side facing away from the emission side.
14. The optoelectronic semiconductor component according to claim 1 , further comprising a lens mounted directly on the radiation exit opening, wherein the lens, viewed in plan view, protrudes around the radiation exit opening.
15. The optoelectronic semiconductor component according to claim 14 , wherein the lens laterally projects beyond the reflector housing.