Thermally tunable low broadband waveguides and related systems and methods
Provided are devices that have a distal portion configured to be implanted in a brain of a subject. The distal portion includes one or more emitters configured to emit light in the visible spectrum. The device includes a proximal portion configured to be external to the brain of the subject while the distal portion is implanted, wherein the proximal portion includes at least one waveguide in optical communication with the one or more emitters. The at least one waveguide defines a cross-sectional width less than 500 nm. The at least one waveguide is optionally coupled to a heating element that is optionally configured to adjust a phase of light within the at least one waveguide.
1. A device, comprising:
a distal portion configured to be implanted in a brain of a subject, the distal portion comprising a phased array of emitters configured to emit light in the visible spectrum, wherein each emitter in the array is independently switchable to enable emission from a selected emitter; and
a proximal portion configured to be external to the brain of the subject while the distal portion is implanted, wherein the proximal portion includes at least one waveguide in optical communication with the phased array of emitters the at least one waveguide defining a cross-sectional width less than 500 nm, wherein the at least one waveguide is coupled to a heating element configured to adjust a phase of light within the at least one waveguide,
wherein the proximal portion comprises an optical switch having an input arm, a first output arm, and a second output arm, and wherein the heating element is configured to adjust the phase of light within the at least one waveguide, between the first output arm and the second output arm, at a switching speed faster than about 1 ms.
2. The device of claim 1 , wherein the at least one waveguide comprises silicon nitride.
3. The device of claim 1 , wherein the at least one waveguide comprises Si3N4 and has a polygonal cross-sectional geometry.
4. The device of claim 1 , wherein the at least one waveguide defines at least a portion of the optical switch, and wherein the at least one waveguide is configured to direct light, responsive to the phase, into the first output arm, into the second output arm, or into both the first and second output arms.
5. The device of claim 4 , wherein the optical switch is an interferometer, and the at least one waveguide defines arms of the interferometer.
6. The device of claim 4 , wherein the optical switch comprises a cascaded network of optical switches that include a lead switch, in which network each optical switch except the lead optical switch has an input arm defined by an output arm of another one of the optical switches in the network, each optical switch in the network has first and second output arms that are each in optical communication with the one or more emitters, each optical switch is an interferometer, and each waveguide is coupled to a respective heating element configured to adjust the phase of the respective waveguide to independently switch emission from a selected emitter.
7. The device of claim 6 , wherein the network includes a terminal row of optical switches, and each first and second output arm of each optical switch in the terminal row is in optical communication with a respective one of the one or more emitters.
8. The device of claim 1 , wherein the one or more emitters are diffraction grating emitters.
9. The device of claim 1 , further comprising one or more electrodes associated with the one or more emitters, wherein one or more of the electrodes is configured to record neural activity.
10. The device of claim 1 , wherein the distal portion has a probe length less than one or more of 1.000 mm, 200 μm, or 100 μm.
11. The device of claim 1 , wherein the phased array of emitters receives single wavelength light from an input fiber.
12. The device of claim 6 , wherein a distance between the phased array of emitters and the cascaded network of optical switches is at least 4 mm.
13. The device of claim 1 , wherein the heating element induces at least one of phase tuning or beam steering.
14. The device of claim 1 , wherein the heating element adjust an imaging displacement.
15. The device of claim 10 , wherein the distal portion has a probe length less than 1.000 mm.
16. The device of claim 1 , wherein the phased array collectively produces single neuron excitation and recording resolution.