Optoelectronic semiconductor chip with two separate light emitting layers
An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.
1. An optoelectronic semiconductor chip comprising:
a p-type semiconductor region,
an n-type semiconductor region,
an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and
at least one further quantum well layer disposed outside of and directly adjoining the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein
the first wavelength range is in an infrared spectral range invisible to a human eye, and
the second wavelength range comprises wavelengths at least partially visible to the human eye.
2. The optoelectronic semiconductor chip according to claim 1 , wherein the second radiation has an intensity maximum at a wavelength of 750 nm to 850 nm.
3. The optoelectronic semiconductor chip according to claim 1 , wherein the first radiation has an intensity maximum at a wavelength of 850 nm to 1000 nm.
4. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer has an electronic band gap E QW2 larger than an electronic band gap E QW1 of the quantum well layers of the multiple quantum well structure, and E QW2 -E QW1 ≥0.1 eV applies.
5. The optoelectronic semiconductor chip according to claim 1 , wherein the quantum well layers of the multiple quantum well structure and the at least one further quantum well layer each comprise In x Al y Ga 1−x−y As or In x Al y Ga 1−x−y P with 0≤x≤1, 0≤y≤1 and x+y≤1.
6. The optoelectronic semiconductor chip according to claim 5 , wherein aluminum content y of the at least one further quantum well layer is greater than aluminum content y of the quantum well layers of the multiple quantum well structure.
7. The optoelectronic semiconductor chip according to claim 5 , wherein indium content x of the at least one further quantum well layer is smaller than indium content x of the quantum well layers of the multiple quantum well structure.
8. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer has a thickness less than the quantum well layers of the multiple quantum well structure.
9. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer is arranged on a side of the multiple quantum well structure facing the n-type semiconductor region.
10. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer is disposed on a side of the multiple quantum well structure facing the p-type semiconductor region.
11. The optoelectronic semiconductor chip according to claim 10 , wherein the multiple quantum well structure is disposed between a p-side confinement layer and an n-side confinement layer, and the p-side confinement layer is disposed between the multiple quantum well structure and the at least one further quantum well layer.
12. The optoelectronic semiconductor chip according to claim 1 , wherein a number of the further quantum well layer(s) provided for emission of the second radiation is 1 to 3.
13. The optoelectronic semiconductor chip according to claim 1 , wherein a number of quantum well layers provided for emission of the first radiation is 3 to 30.
14. The optoelectronic semiconductor chip according to claim 1 , wherein a number of the quantum well layers provided for emission of the first radiation is at least five times greater than a number of further quantum well layer(s) provided for emission of the second radiation.
15. The optoelectronic semiconductor chip according to claim 1 , wherein the first radiation has a power of at least 4.5 W.
16. An optoelectronic semiconductor chip comprising:
a p-type semiconductor region,
an n-type semiconductor region,
an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and
at least one further quantum well layer disposed outside of and directly adjoining the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein
the first wavelength range is in an infrared spectral range invisible to a human eye,
the second wavelength range comprises wavelengths at least partially visible to the human eye,
the second radiation has an intensity maximum at a wavelength of 750 nm to 850 nm,
the first radiation has an intensity maximum at a wavelength of 850 nm to 1000 nm,
a number of the further quantum well layer(s) provided for emission of the second radiation is 1 to 3, and
a number of quantum well layers provided for emission of the first radiation is 3 to 30.