Method and apparatus for charged particle detection
Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.
1. A detection system comprising:
a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements; and
a beam spot processing module configured to:
determine, based on the set of intensity gradients, at least one boundary of a beam spot; and
determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot.
2. A detection system comprising:
a beam spot processing module configured to:
acquire a set of intensity signals from a plurality of electron sensing elements;
determine, based on the set of intensity signals, at least one boundary of a beam spot; and
determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot.
3. The detection system of claim 1 , wherein the beam spot processing module is further configured to:
determine an intensity value of the beam spot based on electron intensity data received from the first set of electron sensing elements.
4. The detection system of claim 3 , wherein the beam spot processing module is further configured to generate an image of a wafer based on the intensity value.
5. The detection system of claim 1 , wherein the signal processing circuit comprises an intensity gradient determination circuit configured to generate the set of intensity gradients.
6. The detection system of claim 5 , wherein the intensity gradient determination circuit comprises a set of comparators configured to:
generate a set of comparison decisions based on comparisons of electron intensity data from adjacent electron sensing elements of the plurality of electron sensing elements, wherein the set of intensity gradients is determined based on the generated set of comparison decisions.
7. The detection system of claim 1 , wherein the beam spot processing module comprises a beam spot boundary determination module configured to determine the at least one boundary of a beam spot.
8. The detection system of claim 7 , wherein the plurality of electron sensing elements forms a sensor surface; and wherein the determination of the at least one boundary of a beam spot comprises the beam spot boundary determination module being further configured to:
associate the set of comparison decisions with a set of locations on the sensor surface;
determine a first location among the set of locations based on a predetermined pattern of the set of comparison decisions; and
determine that the first location is a part of the at least one boundary.
9. The detection system of claim 8 , wherein the predetermined pattern comprises a first set of identical comparison decisions within a first region on the sensor surface and a second set of toggling comparison decisions within a second region on the sensor surface, wherein the beam spot boundary determination module is configured to determine the first location as a location between the first region and the second region.
10. The detection system of claim 1 , wherein the beam spot processing module further comprises a beam spot intensity determination module configured to determine the intensity value of the beam spot.
11. The detection system of claim 10 , wherein determination of the intensity value of the beam spot comprises the beam spot intensity determination module being further configured to:
determine, based on the at least one boundary, that a second set of electron sensing elements of the plurality of electron sensing elements is outside the beam spot;
determine a noise component based on electron intensity data received from the second set of electron sensing elements; and
determine a compensated intensity value based on a combination of the intensity value determined from the electron intensity data of the first set of electron sensing elements and the noise component,
wherein the beam spot processing module is configured to generate the image of the wafer based on the compensated intensity value.
12. The detection system of claim 11 , wherein the determination of an intensity value of the beam spot comprises the beam spot intensity determination module being further configured to:
select one or more electron sensing elements from the second set of electron sensing elements based on a distance between the one or more electron sensing elements and the at least one boundary; and
determine a noise component based on electron intensity data received from the selected one or more electron sensing elements.
13. The detection system of claim 1 , wherein the beam spot processing module further comprises an image reconstruction module configured to generate the image of the wafer based on the intensity value.
14. A detection system comprising:
a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements; and
a beam spot processing module configured to:
determine, based on the set of intensity gradients, a first boundary of a first beam spot and a second boundary of a second beam spot;
determine, based on the first boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the first beam spot;
determine, based on the second boundary, that a second set of electron sensing elements of the plurality of electron sensing elements is within the second beam spot; and
determine, based on the first and second boundary, an overlapping region between the first beam spot and the second beam spot.
15. A detection system comprising:
a beam spot processing module configured to:
acquire a set of intensity signals from a plurality of electron sensing elements;
determine, based on the set of intensity signals, a first boundary of a first beam spot and a second boundary of a second beam spot;
determine, based on the first boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the first beam spot;
determine, based on the second boundary, that a second set of electron sensing elements of the plurality of electron sensing elements is within the second beam spot; and
determine, based on the first and second boundary, an overlapping region between the first beam spot and the second beam spot.