IP Library › Granted Patent US 11,552,134
Granted Patent B2
US 11,552,134 · App. 16/484,631 · Granted Jan 10, 2023

Light emitting diode with microcavities and different reflective layers and fabricating method thereof, display substrate, and display apparatus

Inventors: Juanjuan You (Beijing, CN); Fang Liu (Beijing, CN); Linlin Wang (Beijing, CN)
Assignee: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
H01L27/3223H01L27/322H01L27/3211H01L27/3276H01L51/5271H01L51/56H01L51/5036H01L2227/323
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Quick Facts
Patent No.
US 11,552,134
App. No.
16/484,631
Granted
Jan 10, 2023
Kind
B2
Abstract

The present disclosure is related to a light emitting diode. The light emitting diode may include a pixel unit which may include a first sub-pixel. The first sub-pixel may include a dummy electrode layer and a first electrode layer on the dummy electrode layer. The dummy electrode layer may include a first reflective layer. The first electrode layer may include a second reflective layer and a second transparent conductive layer on the second reflective layer.

Claims (35)

1. A light emitting diode, comprising:

a pixel unit comprising a first sub-pixel;

the first sub-pixel comprising a first electrode layer and a dummy electrode layer, the first electrode layer being on the dummy electrode layer;

wherein the dummy electrode layer comprises a first reflective layer, and the first electrode layer comprises a second reflective layer and a second transparent conductive layer on the second reflective layer;

the light emitting diode further comprises a sixth transparent conductive layer on the second transparent conductive layer, and the second reflective layer and the sixth transparent conductive layer form a first microcavity;

the pixel unit further comprises a second sub-pixel and a third sub-pixel, the second sub-pixel comprises a second electrode layer comprising a third reflective layer and a third transparent conductive layer on the third reflective layer, and the third sub-pixel comprises a third electrode layer comprising a fourth reflective layer, a fourth transparent conductive layer on the fourth reflective layer, and a fifth transparent conductive layer on the fourth transparent conductive layer;

the sixth transparent conductive layer is on the third transparent conductive layer and the fifth transparent conductive layer, the third reflective layer and the sixth transparent conductive layer form a second microcavity, the fourth reflective layer and the sixth transparent conductive layer form a third microcavity, and lengths of the first microcavity, the second microcavity, and the third microcavity are substantially different from one another; and

the third reflective layer and the fourth reflective layer are located at a same level, and the second reflective layer is located at a level different from the third reflective layer and the fourth reflective layer.

2. The light emitting diode of claim 1 , wherein the dummy electrode layer

further comprises a first transparent conductive layer on the first reflective layer.

3. The light emitting diode of claim 2 , wherein:

a thickness of the first transparent conductive layer is different from a thickness of the second transparent conductive layer.

4. The light emitting diode of claim 2 , wherein:

a thickness of the first transparent conductive layer is different from a thickness of the second transparent conductive layer;

a thickness of the third transparent conductive layer is substantially the same as the thickness of the first transparent conductive layer;

a thickness of the fourth transparent conductive layer is substantially the same as the thickness of the first transparent conductive layer; and

a thickness of the fifth transparent conductive layer is substantially the same as the thickness of the second transparent conductive layer.

5. The light emitting diode of claim 4 , wherein:

the thickness of the first transparent conductive layer is larger than the thickness of the second transparent conductive layer.

6. The light emitting diode of claim 2 , wherein:

material of the first transparent conductive layer is the same as material of the second transparent conductive layer.

7. The light emitting diode of claim 6 , wherein:

the material of the first transparent conductive layer comprises ITO

or IZO.

8. The light emitting diode of claim 1 , further comprising:

a white Organic Light Emitting Diode emitting layer on the first electrode layer, the second electrode layer, and the third electrode layer; and

a color filter layer on the sixth transparent conductive layer; wherein:

the sixth transparent conductive layer is on the white layer the white Organic Light Emitting Diode emitting layer; and

the color filter layer is configured to convert a white light emitted from the white Organic Light Emitting Diode emitting layer to light having different colors.

9. The light emitting diode of claim 1 , wherein:

a thickness of the first reflective layer is substantially the same as a thickness of the second reflective layer.

10. The light emitting diode of claim 1 , wherein:

material of the first reflective layer is the same as material of the second reflective layer.

11. A display substrate comprising the light emitting diode of claim 1 .

12. A display apparatus comprising the display substrate of claim 11 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2022
From: BOE TECHNOLOGY GROUP CO., LTD.
To: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
Reel/Frame 061307/0381 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2019
From: YOU, JUANJUAN; LIU, FANG; WANG, LINLIN
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 050006/0862 →
Continuity (1)
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