Optoelectronic component and method for producing an optoelectronic component
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface and a conversion element arranged directly downstream of the main radiation exit surface, wherein the conversion element is substrate-free and includes a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed inorganic sol-gel material selected from the following group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.
1. An optoelectronic component comprising:
a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface; and
a conversion element arranged directly downstream of the main radiation exit surface,
wherein the conversion element is substrate-free, free of fillers and comprises a first layer,
wherein the first layer comprises at least one conversion material embedded in a matrix material,
wherein the matrix material comprises at least one condensed inorganic sol-gel material selected from the group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and
wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.
2. The optoelectronic component according to claim 1 , wherein the conversion element adheres to the main radiation exit surface without an adhesive.
3. The optoelectronic component according to claim 1 , wherein the optoelectronic component is free of organic material.
4. The optoelectronic component according to claim 1 , wherein the semiconductor layer sequence comprises an inorganic layer of SiO 2 , silicon nitride, ITO or aluminum oxide, and wherein the inorganic layer forms at least partially the main radiation exit surface.
5. The optoelectronic component according to claim 1 , wherein the matrix material is condensed monoaluminum phosphate, condensed modified monoaluminum phosphate or condensed aluminum phosphate.
6. The optoelectronic component according to claim 1 , wherein the matrix material is condensed water glass.
7. The optoelectronic component according to claim 1 , wherein the matrix material comprises at least lithium water glass, sodium water glass, potassium water glass or a mixture thereof, and wherein the conversion element comprises a chemical hardener.
8. The optoelectronic component according to claim 1 , wherein the conversion element comprises a layer thickness of 20 μm to 70 μm for partial conversion and 40 μm to 150 μm for full conversion.
9. The optoelectronic component according to claim 1 , wherein the conversion element comprises a layer thickness of 1 μm to 150 μm, and wherein the conversion material comprises quantum dots.
10. The optoelectronic component according to claim 1 , wherein the at least one conversion material is selected from the group consisting of (Y,Gd,Tb,Lu) 3 (Al,Ga) 5 O 12 :Ce 3+ , (Sr,Ca)AlSiN 3 :Eu 2+ , (Sr,Ba,Ca,Mg) 2 Si 5 N 8 :Eu 2+ , (Ca,Sr,Ba) 2 SiO 4 :Eu 2+ , α-SiAlON:Eu 2+ , β-SiAlON:Eu 2+ , (Sr,Ca)S:Eu 2 , (Sr,Ba,Ca) 2 (Si,Al) 5 (N,O) 8 :Eu 2+ , (Ca,Sr) 8 Mg(SiO 4 ) 4 Cl 2 :Eu 2+ , (Sr,Ba)Si 2 N 2 O 2 :Eu 2+ , CdSe, InP, and ZnSe.
11. The optoelectronic component according to claim 1 , wherein at least two different conversion materials are embedded in the matrix material.
12. The optoelectronic component according to claim 1 , wherein the optoelectronic component is configured to emit the radiation with a color temperature between 2500K and 4500K.
13. The optoelectronic component according to claim 1 , wherein the optoelectronic component is configured to emit the radiation with a color temperature between 4500K and 8000K.
14. The optoelectronic component according to claim 1 , wherein the condensed sol-gel material comprises a proportion between 20 and 50 vol %.
15. The optoelectronic component according to claim 1 , wherein the conversion element is free of fillers and scattering particles.
16. A method for producing the optoelectronic component according to claim 1 , the method comprising:
providing the semiconductor layer sequence;
directly applying the conversion element on the main radiation exit surface, wherein the matrix material comprises at least one solution of a sol-gel material in which the conversion material is dispersed;
curing the semiconductor layer sequence and the conversion element; and
separating the cured semiconductor layer sequence and the cured conversion element generated for generating the optoelectronic component.
17. The method according to claim 16 , wherein directly applying the conversion element is carried out by one of the following methods: screen printing, dispensing, spin coating, electrophoretic coating, doctoring, spraying, or dip coating.
18. An optoelectronic component comprising:
a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface; and
a conversion element arranged directly downstream of the main radiation exit surface,
wherein the conversion element is substrate-free and comprises a first layer, wherein the first layer comprises at least one conversion material embedded in a matrix material,
wherein the matrix material comprises at least one condensed inorganic sol-gel material selected from the group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates and tungstates,
wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and
wherein the semiconductor layer sequence is part of a flip chip.
19. The optoelectronic component according to claim 18 , wherein the flip chip comprises a sapphire carrier or is part of a chip scale package (CSP).
20. An optoelectronic component comprising:
a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface; and
a conversion element arranged directly downstream of the main radiation exit surface,
wherein the conversion element is substrate-free and comprises a first layer,
wherein the first layer comprises at least one conversion material embedded in a matrix material,
wherein the matrix material comprises at least one condensed inorganic sol-gel material selected from the group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates and tungstates,
wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and
wherein the optoelectronic component is configured to emit the radiation with a color temperature between 2500K and 4500K or between 4500K and 8000K.