Method for producing optoelectronic semiconductor components

1. A method for producing optoelectronic semiconductor components, the method comprising:

A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces;

B) applying a clear potting, permeable to the radiation generated during operation of the semiconductor chips, directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the light exit main sides;

C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and

D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier,

wherein during method steps A) and B), the light exit main sides face the intermediate carrier and a sequence of the method steps is as follows: A), B), D), C),

and

wherein electrical connection surfaces for contacting the semiconductor chips are arranged on a side of a semiconductor layer sequence of the semiconductor chips that faces the intermediate carrier in step A).

2. The method according to claim 1 , further comprising a method step H), performed after method step B) and before method step D), wherein, in method step B), on the intermediate carrier per semiconductor chip exactly one clear potting is produced so that no continuous clear potting, but a plurality of individual, separate clear pottings are formed, wherein each clear potting extends onto the reflection element, and wherein, in method step H), a singulation takes place only through the reflection element.

3. The method according to claim 1 , wherein, in method step B), a shape of the outer side of the clear potting is defined by a quantity of a material for the clear potting and on account of wetting.

4. The method according to claim 1 , wherein the outer side, viewed in a cross section perpendicular to a respective light exit main side, run like straight sections, and wherein an angle between the outer side and a perpendicular to the respective light exit main side is between 20° and 70° inclusive.

5. The method according to claim 1 ,

wherein the outer side, viewed in a cross section perpendicular to a respective light exit main side, are curved continuously outwards or run parallel to the chip side surfaces in a first region, beginning in a plane with the respective light exit main side, and are continuously curved outwards in an entire remaining second region, and along the chip side surfaces the first region accounts for a proportion of at least 50% of a thickness of the semiconductor chips, and wherein curved outwards is defined as, viewed from a respective semiconductor chip, the outer side are curved concavely so that a width of the clear potting in the direction away from the respective light exit main side decreases more and more slowly, viewed in cross section.

6. The method according to claim 1 ,

wherein, in method step C), the reflection element is formed by at least one reflective metal layer, and

wherein the at least one metal layer at least partially permanently covers a side of a respective semiconductor chip facing away from the intermediate carrier.

7. The method according to claim 1 , wherein, in method step B), on the intermediate carrier per semiconductor chip precisely one clear potting is formed so that no continuous clear potting, but a plurality of individual separate regions of clear pottings are formed.

8. The method according to claim 1 , wherein, in method step B), a continuous clear potting is produced on the intermediate carrier, the clear potting extends over all semiconductor chips, and wherein in a further method step E), performed before the method step D) and before the method step C), a singulation takes place only through the clear potting.

9. A method for producing optoelectronic semiconductor components, the method comprising:

A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces;

B) applying a clear potting, permeable to the radiation generated during operation of the semiconductor chips, directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the light exit main sides;

C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and

D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier,

wherein during method steps A) and B), the light exit main sides face the intermediate carrier and a sequence of the method steps is as follows: A), B), D), C), or

wherein during method steps A) and B), the light exit main sides face away from the intermediate carrier and a sequence of the method steps is as follows: A), C), B), D),

wherein electrical connection surfaces for contacting the semiconductor chips are arranged on a side of a semiconductor layer sequence of the semiconductor chips that faces the intermediate carrier in step A),

wherein, in method step C), the reflection element is formed by a matrix material and reflective scattering particles embedded therein, and

wherein the reflection element terminates flush with a respective light exit main side.

10. The method according to claim 9 ,

wherein a difference in refractive index between the clear potting and the matrix material at 300 K and at a wavelength of 500 nm is at least 0.1,

wherein each semiconductor chips has a semiconductor layer sequence made of AlInGaN and each has a growth substrate made of sapphire,

wherein electrical connection surfaces for contacting the semiconductor chips are each located on the respective light exit main side,

wherein the semiconductor chips are electrically connected to the component carrier by bonding wires, and

wherein the component carrier comprises a plastic housing and a lead frame.

11. The method according to claim 9 , wherein the light exit main sides face the intermediate carrier during steps A) and B), and wherein the sequence of the method steps is as follows: A), B), D), C).

12. The method according to claim 11 , wherein, in method step B), on the intermediate carrier per semiconductor chip precisely one clear potting is formed so that no continuous clear potting, but a plurality of individual separate regions of clear pottings are formed.

13. The method according to claim 11 , wherein, in method step B), a continuous clear potting is produced on the intermediate carrier, the clear potting extends over all semiconductor chips, and wherein in a further method step E), performed before the method step D) and before the method step C), a singulation takes place only through the clear potting.

14. The method according to claim 9 , wherein the light exit main sides are remote from the intermediate carrier during steps A) and B), and wherein the sequence of the method steps is as follows: A), C), B), D).

15. The method according to claim 14 ,

wherein, in method step C), the reflection element is applied as a paste in grid-like fashion, and

wherein, in method step B), the reflection element is completely covered with the clear potting.

16. The method according to claim 9 , further comprising a method step G), performed after method step B) and before method step D), and wherein in method step B) the clear potting is produced in a continuous, contiguous manner, and in method step G) a singulation takes place through the reflection element and through the clear potting.

17. A method for producing optoelectronic semiconductor components, the method comprising:

A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces;

B) applying a clear potting, permeable to the radiation generated during operation of the semiconductor chips, directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the light exit main sides;

C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces;

D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier,

wherein during method steps A) and B), the light exit main sides face the intermediate carrier and a sequence of the method steps is as follows: A), B), D), C), or

wherein during method steps A) and B), the light exit main sides face away from the intermediate carrier and a sequence of the method steps is as follows: A), C), B), D), and

wherein electrical connection surfaces for contacting the semiconductor chips are arranged on a side of a semiconductor layer sequence of the semiconductor chips that faces the intermediate carrier in step A); and

F) applying a casting material and phosphor particles, wherein the phosphor particles sediment onto a respective light exit main side and onto a respective clear potting, and

wherein in step F follows method steps B) and C).

18. The method according to claim 17 , wherein the light exit main sides face the intermediate carrier during steps A) and B), and wherein the sequence of the method steps is as follows: A), B), D), C).

19. The method according to claim 18 , wherein, in method step B), on the intermediate carrier per semiconductor chip precisely one clear potting is formed so that no continuous clear potting, but a plurality of individual separate regions of clear pottings are formed.

20. The method according to claim 18 , wherein, in method step B), a continuous clear potting is produced on the intermediate carrier, the clear potting extends over all semiconductor chips, and wherein in a further method step E), performed before the method step D) and before the method step C), a singulation takes place only through the clear potting.