Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device

1. A laser irradiation apparatus comprising:

a laser generation device configured to generate laser light;

a levitation unit configured to levitate an object to be processed to which the laser light is applied; and

a conveyance unit configured to convey the levitated object to be processed,

wherein

the conveyance unit comprises:

a holding mechanism for holding the object to be processed by absorbing the object to be processed; and

a moving mechanism for moving the holding mechanism in a conveyance direction, and

the holding mechanism comprises:

a base including: a first surface serving as an absorption surface on which the object to be processed is absorbed; a second surface opposite to the first surface; and a plurality of through holes extending from the first surface to the second surface;

a plurality of pipes each of which is connected to a respective one of the plurality of through holes on the second surface of the base;

an evacuation mechanism for evacuating air from the plurality of pipes; and

a plurality of absorption assistance valves each of which is disposed in the middle of a respective one of the plurality of pipes, each of the plurality of absorption assistance valves being configured to be closed when a flow rate of a gas flowing into the pipe through the through hole becomes equal to or higher than a threshold,

wherein

the first surface of the base is divided into a plurality of divided first surfaces, and

the through hole is provided on each of the plurality of divided first surfaces, and

wherein

the first surface of the base is divided along the conveyance direction of the conveyance unit.

2. The laser irradiation apparatus according to claim 1 , wherein the first surface of the base is divided along a direction perpendicular to the conveyance direction of the conveyance unit.

3. The laser irradiation apparatus according to claim 1 , wherein the through holes include:

a first through hole opened on the first surface; and

a second through hole connected to the first through hole and connected to the pipe on the second surface, and

a diameter of the second through hole is larger than that of the first through hole.

4. The laser irradiation apparatus according to claim 3 , wherein

the through holes include a plurality of first through holes, and

the second through hole is connected to the plurality of first through holes.

5. The laser irradiation apparatus according to claim 1 , wherein a groove is formed on each of the plurality of divided first surfaces.

6. The laser irradiation apparatus according to claim 5 , wherein the grooves formed on the respective divided first surfaces are connected to one another.

7. The laser irradiation apparatus according to claim 6 , wherein the through hole is opened in a place where the groove is formed on each of the plurality of divided first surfaces.

8. The laser irradiation apparatus according to claim 1 , wherein the holding mechanism comprises:

a pressure gauge configured to measure a pressure inside one of the plurality of pipes; and

a determination unit configured to determine whether or not the object to be processed is absorbed based on the pressure measured by the pressure gauge.

9. The laser irradiation apparatus according to claim 1 , wherein

the levitation unit includes first to fourth areas to which the object to be processed is conveyed,

the conveyance unit comprises:

a first conveyance unit configured to convey the object to be processed from the first area to the second area;

a second conveyance unit configured to convey the object to be processed from the second area to the third area;

a third conveyance unit configured to convey the object to be processed from the third area to the fourth area; and

a fourth conveyance unit configured to convey the object to be processed from the fourth area to the first area;

the laser light is applied to the object to be processed when the object to be processed is conveyed from the first area to the second area, and

a length of the first holding mechanism of the first conveyance unit in a direction perpendicular to a first conveyance direction of the first conveyance unit is shorter than a length of the second holding mechanism of the second conveyance unit in a direction perpendicular to a second conveyance direction of the second conveyance unit and a length of the fourth holding mechanism of the fourth conveyance unit in a direction perpendicular to a fourth conveyance direction of the fourth conveyance unit.

10. The laser irradiation apparatus according to claim 1 , wherein the base is made of aluminum.

11. A laser irradiation method for applying laser light to an object to be processed by conveying the object to be processed using a conveyance unit while levitating the object to be processed using a levitation unit, comprising:

(a) holding, by a holding mechanism, the object to be processed by absorbing the object to be processed;

(b) conveying, by a moving mechanism, the object to be processed by moving the holding mechanism holding the object to be processed; and

(c) applying the laser light to the object to be processed while the moving mechanism is moving the holding mechanism, wherein

the holding mechanism comprises:

a base including: a first surface serving as an absorption surface on which the object to be processed is absorbed; a second surface opposite to the first surface; and a plurality of through holes extending from the first surface to the second surface; the first surface of the base being divided along the conveyance direction of the conveyance unit into a plurality of divided first surfaces, and the through hole being provided on each of the plurality of divided first surfaces;

a plurality of pipes each of which is connected to a respective one of the plurality of through holes on the second surface of the base;

an evacuation mechanism for evacuating air from the plurality of pipes; and

a plurality of absorption assistance valves each of which is disposed in the middle of a respective one of the plurality of pipes, each of the plurality of absorption assistance valves being configured to be closed when a flow rate of a gas flowing into the pipe through the through hole becomes equal to or higher than a threshold.

12. A method for manufacturing a semiconductor device, comprising the steps of:

(A) forming an amorphous film over a substrate; and

(B) crystallizing the amorphous film by applying laser light to the amorphous film, wherein

the step (B) is a step of applying the laser light to the amorphous film by conveying the substrate using a conveyance unit while levitating the substrate using a levitation unit, and comprises:

(a) holding, by a holding mechanism, the substrate by absorbing the substrate;

(b) conveying, by a moving mechanism, the substrate by moving the holding mechanism holding the substrate; and

(c) applying the laser light to the substrate while the moving mechanism is moving the holding mechanism, and

the holding mechanism comprises:

a base including: a first surface serving as an absorption surface on which the substrate is absorbed; a second surface opposite to the first surface; and a plurality of through holes extending from the first surface to the second surface; the first surface of the base being divided along the conveyance direction of the conveyance unit into a plurality of divided first surfaces, and the through hole being provided on each of the plurality of divided first surfaces;

a plurality of pipes each of which is connected to a respective one of the plurality of through holes on the second surface of the base;

an evacuation mechanism for evacuating air from the plurality of pipes; and

a plurality of absorption assistance valves each of which is disposed in the middle of a respective one of the plurality of pipes, each of the plurality of absorption assistance valves being configured to be closed when a flow rate of a gas flowing into the pipe through the through hole becomes equal to or higher than a threshold.