Composition for performing cleaning after chemical/ mechanical polishing
Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.
1. A post-chemical-mechanical-polishing cleaning composition, comprising choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, polyoxyethylene nonylphenyl ether, and sorbitol-based polyether polyol,
wherein the post-chemical-mechanical-polishing cleaning composition comprises 5 to 20 wt % of choline hydroxide, 1 to 10 wt % of tetrabutylammonium hydroxide, 1 to 4 wt % of 1,2,4-triazole, 2 to 4 wt % of 2-hydroxypyridine, 0.01 to 5 wt % of polyoxyethylene nonylphenyl ether, 0.01 to 5 wt % of sorbitol-based polyether polyol, and a remainder of ultrapure water such that a total amount of the composition is 100 wt %.
2. The post-chemical-mechanical-polishing cleaning composition of claim 1 , comprising 10 to 15 wt % of choline hydroxide and 1 to 5 wt % of tetrabutylammonium hydroxide.
3. The post-chemical-mechanical-polishing cleaning composition of claim 2 , which has a pH of 9 to 13.