Method of manufacturing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

1. A method of manufacturing an optoelectronic semiconductor chip comprising:

a) providing a semiconductor layer sequence having an active region that generates or receives radiation on a substrate;

b) forming at least one recess extending through the active region;

c) forming a metallic reinforcement layer on the semiconductor layer sequence by galvanic deposition, said metallic reinforcement layer completely covering the semiconductor layer sequence and at least partially filling the recess; and

d) removing the substrate, wherein the metallic reinforcement layer is leveled on a side facing away from the semiconductor layer sequence, wherein

a first semiconductor layer of the semiconductor layer sequence is exposed by the at least one recess and a seed layer is formed prior to forming the metallic reinforcement layer, said seed layer abuts the first semiconductor layer in the at least one recess, and the seed layer is configured to be electrically conductive.

2. The method according to claim 1 , wherein the seed layer is formed as a mirror layer or a mirror layer is applied to the semiconductor layer sequence prior to forming the seed layer.

3. The method according to claim 1 , wherein the metallic reinforcement layer forms a carrier of the semiconductor chip which mechanically stabilizes the semiconductor layer sequence.

4. The method according to claim 1 , wherein a carrier is attached on the side of the metallic reinforcement layer facing away from the semiconductor layer sequence after c).

5. The method according to claim 4 , wherein the carrier is attached to the metallic reinforcement layer by a direct bond.

6. The method according to claim 1 , wherein the semiconductor chip comprises a semiconductor body comprising the semiconductor layer sequence.

7. The method according to claim 6 , wherein the at least one recess is an inner recess completely surrounded by material of the semiconductor body in the lateral direction.

8. The method according to claim 6 , wherein the at least one recess is a circumferential recess running around the semiconductor body at least in places in the lateral direction.

9. The method according to claim 8 , wherein the metallic reinforcement layer is electrically insulated from the semiconductor body in the circumferential recess.

10. The method according to claim 8 , wherein the metallic reinforcement layer electrically contacts the semiconductor body in the circumferential recess.

11. The method according to claim 6 , wherein the semiconductor body is formed from the semiconductor layer sequence after c) and after d).

12. An optoelectronic semiconductor chip comprising:

a semiconductor body comprising a semiconductor layer sequence having an active region that generates or receives radiation;

at least one recess extending through the active region;

a metallic reinforcement layer completely covering the semiconductor layer sequence and at least partially filling the recess;

wherein the semiconductor chip is free of a growth substrate of the semiconductor layer sequence, and (i) the metallic reinforcement layer forms a carrier of the semiconductor chip or (ii) a carrier is arranged on a side of the metallic reinforcement layer facing away from the semiconductor body,

the metallic reinforcement layer is leveled on a side facing away from the semiconductor layer sequence, and

an electrically conductive seed layer abuts a first semiconductor layer of the semiconductor layer sequence in the at least one recess.