EUV developer composition for forming photosensitive photoresist micropattern
An extreme ultraviolet (EUV) developer composition for use in manufacturing a semiconductor is provided. More particularly an EUV developer composition for forming a fine pattern is provided, which is capable of forming a more uniform pattern and lowering EOP in a development process, the EUV developer composition including a water-soluble polymer represented by Chemical Formula 1, a nonionic surfactant represented by Chemical Formula 2, and an alkali compound.
1. A developer composition for forming a fine pattern, comprising:
a water-soluble polymer represented by Chemical Formula 1 below;
a nonionic surfactant represented by Chemical Formula 2 below; and
an alkali compound:
in Chemical Formula 1, n is an integer selected from among 10 to 50; and
in Chemical Formula 2, m is an integer selected from among 10 to 40.
2. The developer composition of claim 1 , wherein in Chemical Formula 1, n is an integer selected from among 20 to 30.
3. A method of forming a fine pattern, the method comprising dispensing the developer composition of claim 2 onto a wafer.
4. The developer composition of claim 1 , wherein in Chemical Formula 2, m is an integer selected from among 10 to 20.
5. A method of forming a fine pattern, the method comprising dispensing the developer composition of claim 4 onto a wafer.
6. The developer composition of claim 1 , wherein the alkali compound is at least one selected from the group consisting of tetraethyl ammonium hydroxide, tetramethyl ammonium hydroxide, tetrabutyl ammonium hydroxide, potassium hydroxide, sodium phosphate, sodium silicate and sodium bicarbonate.
7. A method of forming a fine pattern, the method comprising dispensing the developer composition of claim 6 onto a wafer.
8. A method of forming a fine pattern, the method comprising dispensing using the developer composition of claim 1 onto a wafer.
9. The developer composition of claim 1 , comprising, based on a total weight of the composition, 0.1 to 5 wt % of the water-soluble polymer, 0.01 to 5 wt % of the nonionic surfactant, 0.1 to 10 wt % of the alkali compound and a remainder of deionized water.
10. A method of forming a fine pattern, the method comprising dispensing the developer composition of claim 9 onto a wafter.