Group III nitride semiconductor substrate
According to the present invention, there is provided a group III nitride semiconductor substrate (free-standing substrate 30 ) that is formed of group III nitride semiconductor crystals. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A variation coefficient of an emission wavelength of each of the first and second main surfaces, which is calculated by dividing a standard deviation of an emission wavelength by an average value of the emission wavelength, is 0.05% or less in photoluminescence (PL) measurement in which mapping is performed in units of an area of 1 mm 2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30 , variations in quality among the devices are suppressed.
1. A group III nitride semiconductor substrate that is formed of group III nitride semiconductor crystals, wherein both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes, and a variation coefficient of an emission wavelength of each of the first and second main surfaces is 0.05% or less in photoluminescence (PL) measurement performed under conditions in which mapping is performed in units of an area of 1 mm 2 by emitting helium-cadmium (He-Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature.
2. The group III nitride semiconductor substrate according to claim 1 ,
wherein a variation coefficient of an emission intensity of the second main surface in PL measurement performed under the conditions according to claim 1 is 15% or less.
3. The group III nitride semiconductor substrate according to claim 2 ,
wherein the variation coefficient of the emission intensity of the second main surface is 10% or less.
4. The group III nitride semiconductor substrate according to claim 2 ,
wherein the second main surface is a semipolar plane on a Ga polarity side.
5. The group III nitride semiconductor substrate according to claim 1 ,
wherein a variation coefficient of a half width of a PL spectrum of each of the first and second main surfaces in PL measurement performed under the conditions according to claim 1 is 3.0% or less.
6. The group III nitride semiconductor substrate according to claim 1 ,
wherein a film thickness is 300 μm or more and 1000 μm or less.