Device manufacturing method

1. A device manufacturing method comprising:

exposing a first substrate using a lithographic apparatus to form a patterned layer comprising first features;

processing the first substrate to transfer the first features into the first substrate;

determining displacements of the first features from their nominal positions in the first substrate, wherein the displacements are associated with distortions induced by a projection system of the lithographic apparatus and are separate from displacements, if any, of the first features associated with other distortions or errors;

determining a correction to at least partly compensate for the displacements; and

exposing a second substrate to form a patterned layer comprising the first features,

wherein the correction is applied for or during the exposing of the second substrate to form the patterned layer comprising the first features.

2. The method according to claim 1 , wherein:

the exposing the first substrate comprises:

a first exposure step of using the lithographic apparatus to form a plurality of reference patterns in different positions in the patterned layer by repeatedly displacing the first substrate and exposing a reference pattern onto the first substrate, the displacing determining the position of the formed reference pattern in the patterned layer; and

a second exposure step of using the lithographic apparatus to form a plurality of further patterns as part of the first features in the patterned layer by using a step-and-scan exposure and a feature in the patterning device; and

the determining displacements comprises determining displacements of the plurality of further patterns relative to one or more reference patterns of the plurality of reference patterns.

3. The method according to claim 1 , wherein the displacements of the first features are derived from projection system aberration data associated with the lithographic apparatus.

4. The method according to claim 1 , wherein the displacements of the first features are derived from alignment data obtained before or after the exposing the first substrate using the lithographic apparatus.

5. The method according to claim 1 , wherein:

the exposing the first substrate comprises:

a first exposure step of positioning the first substrate at a first focus level and using the lithographic apparatus to form a first plurality of reference patterns in the patterned layer; and

a second exposure step of positioning the first substrate at a second focus level and using the lithographic apparatus to form a second plurality of reference patterns in the patterned layer; and

the determining the displacements comprises determining the displacements of the first features from their nominal positions in the first substrate based on measured shifts in position between the first plurality of reference patterns and the second plurality of reference patterns.

6. The method according to claim 1 , wherein the determining displacements of the first features comprises:

exposing the first substrate to form a second patterned layer comprising second features; and

measuring overlay on the first substrate between the first and second features.

7. The method according to claim 6 , wherein:

the exposing the first substrate to form a patterned layer comprising first features is performed in a first type of lithographic apparatus; and

the exposing the first substrate to form a second patterned layer comprising second features is performed in a second type of lithographic apparatus different from the first type of lithographic apparatus.

8. The method according to claim 1 , further comprising:

processing the second substrate to transfer the first features into the second substrate;

measuring displacements of the first features from their nominal positions in the second substrate;

determining a residual correction to compensate for any residual displacement of the first features in the second substrate; and

exposing the second substrate to form a second patterned layer comprising second features, wherein the residual correction is applied for or during the exposing of the second substrate to form a second patterned layer comprising second features.

9. The method according to claim 8 , wherein exposing the second substrate to form a first patterned layer is performed using a first type of lithographic apparatus and exposing the second substrate to form a second patterned layer is performed using a second type of lithographic apparatus, the second type of lithographic apparatus being of a different type than that of the first type of lithographic apparatus.

10. The method according to claim 1 , further comprising:

processing the second substrate to transfer the first features into the second substrate;

determining displacements of the first features from their nominal positions in the second substrate;

determining a residual correction to compensate for any residual displacement of the first features in the second substrate;

using the residual correction to improve the correction; and

exposing a third substrate to form a patterned layer comprising the first features,

wherein the improved correction is applied for or during the exposing of the third substrate.

11. The method according to claim 1 , further comprising:

processing the second substrate to transfer the first features into the second substrate;

exposing the second substrate to form a second patterned layer comprising second features;

processing the second substrate to transfer the second features into the second substrate;

determining second displacements of the second features from their nominal positions in the second substrate;

determining a second correction to at least partly compensate for the second displacements; and

exposing a third substrate to form a patterned layer comprising the second features,

wherein the second correction is applied for or during the exposing of the third substrate.

12. The method according to claim 1 , further comprising calculating a compensation to account for aberration of a projection system of the lithographic apparatus and applying the compensation for or during exposing of the first substrate using the lithographic apparatus to form the patterned layer comprising first features.

13. The method according to claim 1 , further comprising calculating a factor dependent on a selected feature of the first features to correct for aberration of a projection system of the lithographic apparatus with reference to the selected feature and applying the factor for or during exposing of the first substrate using the lithographic apparatus to form the patterned layer comprising first features.

14. The method according to claim 1 , wherein the processing comprises one or more selected from: etching, deposition, polishing and/or annealing.

15. A method comprising:

obtaining a first substrate exposed by a first lithographic apparatus to form a patterned layer comprising first features and processed subsequently to transfer the first features into the first substrate;

determining displacements of the first features from their nominal positions in the first substrate, wherein the displacements are associated with distortions induced by a projection system of the first lithographic apparatus and are separate from displacements, if any, of the first features associated with other distortions or errors; and

determining a correction to configure a second lithographic apparatus, wherein the correction at least partly compensates for the displacements when used during or for exposing a second substrate using the second lithographic apparatus to form a patterned layer comprising the first features.

16. The method according to claim 15 , wherein the first lithographic apparatus and the second lithographic apparatus are the same.

17. The method according to claim 15 , wherein the displacements of the first features are derived from projection system aberration data associated with the first lithographic apparatus.

18. The method according to claim 15 , further comprising:

obtaining the second substrate having the first features formed thereon;

obtaining measured displacements of the first features from their nominal positions in the second substrate; and

determining a residual correction to compensate for any residual displacement of the first features in the second substrate.

19. A non-transitory computer-readable medium comprising instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:

obtain displacements of first features in a first substrate from their nominal positions, wherein the displacements of the first features are obtained after exposure of the first substrate by a first lithographic apparatus to form a patterned layer comprising the first features and after processing of the exposed first substrate to transfer the first features into the first substrate and wherein the displacements are associated with distortions induced by a projection system of the first lithographic apparatus and are separate from displacements, if any, of the first features associated with other distortions or errors; and

determine a correction to configure a second lithographic apparatus, wherein the correction at least partly compensates for the displacements when used during or for exposing a second substrate using the second lithographic apparatus to form a patterned layer comprising the first features.

20. A non-transitory computer-readable medium comprising instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:

provide information to cause exposure of a first substrate using a lithographic apparatus to form a patterned layer comprising first features;

obtain displacements of the first features in the first substrate from their nominal positions in the first substrate, wherein the displacements of the first features are obtained after processing of the exposed first substrate to transfer the first features into the first substrate and wherein the displacements are associated with distortions induced by a projection system of the lithographic apparatus and are separate from displacements, if any, of the first features associated with other distortions or errors;

determine a correction to at least partly compensate for the displacements; and

provide information to cause exposure of a second substrate to form a patterned layer comprising the first features, wherein the correction is applied for or during the exposure of the second substrate to form the patterned layer comprising the first features.