IP Library Granted Patent US 11,345,640
Granted Patent B2
US 11,345,640 · App. 16/494,928 · Granted May 31, 2022

Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body

Inventors: Toru Ujihara (Nagoya, JP); Yukihisa Takeuchi (Nagoya, JP); Daishi Shiojiri (Nagoya, JP); Masaki Matsumoto (Nagoya, JP); Hiroshi Saito (Nagoya, JP); Ikuo Hayashi (Nagoya, JP)
Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
C04B35/581C30B29/38C30B29/62
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Quick Facts
Patent No.
US 11,345,640
App. No.
16/494,928
Granted
May 31, 2022
Kind
B2
Abstract

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al 2 O 3 substrate placed in the reaction chamber.

Claims (18)

1. A method for producing AlN whiskers, the method comprising:

heating an Al-containing material in a first chamber to thereby generate Al gas;

introducing the Al gas into a second chamber through a first inlet port while introducing nitrogen gas into the second chamber through a second inlet port; and

growing AlN whiskers on the surface of an insulating substrate placed in the second chamber.

2. A method for producing AlN whiskers according to claim 1 , wherein

the insulating substrate is any of an Al 2 O 3 substrate, an AlN polycrystalline substrate, Al 2 O 3 particles, and AlN particles.

3. A method for producing AlN whiskers according to claim 1 ,

wherein the atmosphere temperature in the second chamber is adjusted to 1,500° C. to 1,800° C. during growth of AlN whiskers.

4. A method for producing AlN whiskers, the method comprising:

heating an Al-containing material in a first chamber to thereby generate Al gas;

introducing the Al gas into a second chamber through a first inlet port while introducing nitrogen gas into the second chamber through a second inlet port;

growing a fibrous AlN single crystal on the surface of an insulating substrate placed in the second chamber;

forming an oxygen atom-containing layer on the surface of the AlN single crystal; and

forming a hydrocarbon group on the surface of the oxygen atom-containing layer.

5. A method for producing AlN whiskers according to claim 4 , wherein,

in formation of the hydrocarbon group, the method comprises

mixing the AlN single crystal comprising the oxygen atom-containing layer with stearic acid and cyclohexane, and

refluxing the resultant mixture.

Assignments (2)
CHANGE OF NAME Recorded May 23, 2024
From: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
To: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM
Reel/Frame 067527/0190 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2019
From: UJIHARA, TORU; TAKEUCHI, YUKIHISA; SHIOJIRI, DAISHI; MATSUMOTO, MASAKI; SAITO, HIROSHI; HAYASHI, IKUO
To: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
Reel/Frame 050401/0736 →
Priority Claims (3)
JP JP2017-053622 · Mar 17, 2017 · national
JP JP2017-053623 · Mar 17, 2017 · national
JP JP2017-053624 · Mar 17, 2017 · national
Continuity (1)
Related Publication 20200095170A1 · Mar 26, 2020