Method for producing an optoelectronic component, and optoelectronic component
A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.
1. A method for producing an optoelectronic component, the method comprising:
providing a semiconductor chip having an active region for radiation emission;
applying a seed layer on the semiconductor chip, wherein the seed layer comprises a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal;
applying a structured photoresist layer directly to the seed layer; and
applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer,
wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.
2. The method according to claim 1 , further comprising tempering the seed layer.
3. The method according to claim 1 , further comprising removing the photoresist layer with a lift-off method.
4. The method according to claim 1 , further comprising removing the regions of the seed layer not covered by the photoresist layer by wet chemical etching.
5. The method according to claim 1 , wherein a region between the photoresist layer and the seed layer is free of a nitride layer for adhesion promotion.
6. The method according to claim 1 , wherein the seed layer is free of titanium.
7. The method according to claim 1 , wherein the first metal is gold, silver, platinum or copper.
8. The method according to claim 1 , wherein the second metal is zinc, tin or aluminum.
9. The method according to claim 1 , wherein the first metal is gold and the second metal is zinc.
10. The method according to claim 1 , wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.
11. The method according to claim 1 , wherein the seed layer has a layer thickness between 50 nm and 5000 nm.
12. The method according to claim 1 , wherein the solder layer comprises a metal which is electrodeposited and corresponds to the first metal of the seed layer.
13. An optoelectronic component comprising:
a semiconductor chip comprising an active region configured to emit radiation;
a structured seed layer comprising a first metal and a second metal being different from the first metal, wherein the second metal is less noble than the first metal, and wherein the seed layer is arranged on the semiconductor chip; and
a solder layer arranged directly on the seed layer,
wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.
14. The optoelectronic component according to claim 13 , wherein the solder layer comprises the first metal.
15. The optoelectronic component according to claim 13 , wherein the solder layer comprises the first metal and tin.