Infra-red spectroscopy system
A sample slide ( 100 ) for use in a spectrometer ( 501 ), wherein the sample slide comprises a plurality of sample-receiving portions ( 111 - 114 ) provided on a sample side ( 115 ) of the slide, and a plurality of beam-receiving portions ( 121 - 124 ) provided on a beam-receiving side ( 125 ) of the slide, each beam-receiving portion being arranged opposite a respective sample-receiving portion, and wherein each beam-receiving portion is configured to act as an internal reflection element (IRE). A device ( 300 ) for use with a spectrometer ( 501 ) comprises a stage ( 330 ) configured to receive a sample slide ( 100 ); and a moving mechanism ( 360 ) configured to move the sample slide relative to a sample-measuring location ( 320 ) of the device. Associated methods for preparing a sample and measuring a sample are also disclosed.
1. A sample slide, comprising:
a plurality of sample-receiving portions provided on a sample side of the slide:
a plurality of beam-receiving portions provided on a beam side of the slide, each beam-receiving portion being arranged opposite a respective sample-receiving portion, and wherein each beam-receiving portion comprises an internal reflection element; and
a thickness between each of the plurality of beam-receiving portions and each of the opposite respective sample-receiving portions selected from the group consisting of 380 μm, 525 μm and 675 μm.
2. The sample slide according to claim I, wherein the sample-receiving portions are positioned as selected from the group consisting of longitudinally aligned relative to the slide and arranged as one or more rows.
3. The sample slide according to claim 1 , wherein one or more of the sample-receiving portions comprise a feature selected from the group consisting of a recessed portion and surrounded by a raised portion.
4. The sample slide according to claim 1 , wherein one or more of the sample-receiving portions are configured to receive or support a dry sample.
5. The sample slide according to claim 1 , wherein the internal reflection element is selected from the group consisting of adjacent grooves that are aligned or parallel and adjacent prisms that are aligned or parallel.
6. The sample slide according to claim 5 , wherein each groove has a width in the range of 50-500 μm.
7. The sample slide according to claim 5 , wherein the spacing between adjacent grooves is in the range of 0-200 μm.
8. The sample slide according to claim 1 , wherein the slide has a thickness in the range of 300700 μm.
9. The sample slide according to claim 1 , wherein the sample slide is made of silicon.
10. The sample slide according to claim 1 , further comprising a slide holder wherein the sample slide is provided on, or within, or is attached to the slide holder.
11. The sample slide of claim 1 , wherein the sample slide is configured for use in a FTIR spectrometer.
12. The sample slide of claim 1 , wherein the sample slide is configured for use in an ATR-FTIR spectrometer.
13. The sample slide of claim 1 , wherein said internal reflection element comprises an infra-red transmissible material.
14. The sample slide of claim 13 , wherein said infra-red transmissible material is selected from the group consisting of diamond, germanium, zinc selenide and silicon.
15. A device, comprising:
a stage configured to receive a sample slide, the sample slide comprising a plurality of sample-receiving portions on a sample side of the slide and a plurality of beam-receiving portions, wherein each beam-receiving portion comprises an internal reflection element provided on a beam side of the slide, and a thickness between each of the plurality of beam-receiving portions and each of the opposite respective sample-receiving portions selected from the group consisting, of 380 μm, 525 μm and 675 μm; and
a moving mechanism configured to move the sample slide relative to a sample-measuring location.
16. The device according to claim 15 , wherein each beam-receiving portion is arranged opposite a respective sample-receiving portion.
17. The device according to claim 15 , wherein the moving mechanism is configured to move the stage.
18. The device according to claim 15 , wherein the moving mechanism is configured to move the sample slide.
19. The device according to claim 15 , wherein the moving mechanism is configured to move in a direction selected from the group consisting of generally aligned with the sample-receiving portions, transverse to the slide and perpendicular to the slide.
20. The device according to claim 15 , wherein the moving mechanism is configured to sequentially move the sample slide, slide holder and stage by a distance between two adjacent sample-receiving portions.
21. The device according to claim 15 , wherein the device further comprises at least one optical element configured to guide a radiation beam to the sample-measuring location.
22. The device of claim 15 , wherein said internal reflection element comprises an infra-red transmissible material.
23. The device of claim 22 , wherein said infra-red transmissible material is selected from the group consisting of diamond, germanium, zinc selenide and silicon.
24. A method for measuring a sample, the method comprising:
coupling a stage configured to receive a sample slide comprising a sample side and a beam side to a spectrometer,
placing the sample slide on the stage such that the sample side comprises a plurality of sample receiving portions positioned away from the spectrometer and the beam side comprises a plurality of beam-receiving portions wherein each beam-receiving portion comprises an internal reflection element positioned towards the spectrometer, wherein each beam-receiving portion further comprise adjacent grooves that are aligned or parallel and adjacent prisms that are aligned or parallel and a thickness between each of the plurality of beam-receiving portions and each of the opposite respective sample-receiving portions selected from the group consisting of 380 μm, 525 μm and 675 μm; and
moving the sample slide relative to a sample-measuring location so as to sequentially analyse, measure or detect a plurality of samples disposed on the sample receiving portions.
25. The method according to claim 24 , wherein the spectrometer is an ATR-FTIR spectrometer.
26. The method of claim 24 , further comprising measuring data using Attenuated Total Reflection (ATR)-FTIR spectroscopic analysis.
27. The method according to claim 26 , further comprising processing the measured data using multivariate analysis.
28. The method according to claim 26 , further comprising processing the measured data using Principal Component Analysis.
29. The method according to claim 24 , comprising placing one or more samples on one or more of the sample-receiving portions.
30. The method according to claim 29 , further comprising drying the one or more samples.
31. The method according to claim 30 , wherein said drying comprises conditions selected from the group consisting of a temperature of approximately 30-36° C. and a gas flow rate of at least 50 m 3 /h.
32. The method of claim 24 , wherein said internal reflection element comprises an infra-red transmissible material.
33. The method of claim 32 , wherein said infra-red transmissible material is selected from the group consisting of diamond, germanium, zinc selenide and silicon.
34. A method of preparing a sample for IR spectral analysis, the method comprising: drying one or more samples on a sample slide comprising a plurality of sample-receiving portions on a sample side of the slide and a plurality of beam-receiving portions, wherein each beam-receiving portion comprises an internal reflection element provided on a beam side of the slide, a thickness between each of the plurality of beam-receiving portions and each of the opposite respective sample-receiving portions selected from the group consisting of 380 μm, 525 μm and 675 μm, at a temperature of approximately 30-36° C. and/or under a gas flow rate of at least 50 m 3 /h.
35. The method of claim 34 , wherein the drying is at a temperature of 34.5 to 35.5° C.
36. The method of claim 34 , wherein the drying is under a gas flow rate of at least 90 m 3 /h.
37. The method of claim 34 , wherein said internal reflection element comprises an infra-red transmissible material.
38. The method of claim 37 , wherein said infra-red transmissible material is selected from the group consisting of diamond, germanium, zinc selenide and silicon.