Light emitting device
The present disclosure relates to a solid-state light emitting device, a solid state light absorbing device and methods for fabricating the same. In particular, the present disclosure relates to a light emitting device comprising: a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer; a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer; and electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer; wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.
1. An inorganic light emitting device comprising:
a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer;
a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer, wherein the plurality of nanoparticles comprise a first set of nanoparticles with an average size between 2 nm and 3 nm, a second set of nanoparticles with an average size between 5 nm and 6 nm, and a third set of nanoparticles with an average size between 9 nm and 10 nm; and
electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer;
wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.
2. The device of claim 1 wherein the voltage within a predetermined range is applied to the pair of electrodes at room temperature and ambient pressure conditions.
3. The device of claim 1 , wherein the transition metal dichalcolgenide layer consists of tungsten diselenide.
4. The device of claim 3 , wherein the transition metal dichalcolgenide layer consists of less than thirty atomic monolayers of tungsten diselenide.
5. The device of claim 3 , wherein the transition metal dichalcolgenide layer consists of less than five atomic monolayers of tungsten diselenide.
6. The device of claim 3 , wherein the transition metal dichalcolgenide layer consists of a single atomic monolayer of tungsten diselenide.
7. The device of claim 1 , wherein the plurality of nanoparticles consist of tungsten diselenide nanoparticles.
8. The device of claim 7 , wherein the plurality of tungsten diselenide nanoparticles are in the form of tungsten diselenide flakes.
9. The device of claim 1 , wherein the transition metal dichalcolgenide layer forms one or more light emitting layer, wherein the two layers comprise wide bandgap materials.
10. The device of claim 1 , wherein the nanoparticles comprise tungsten diselenide nanoparticles with a standard size deviation between 0.5 nm and 2 nm.
11. An inorganic photovoltaic device comprising:
a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer;
a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer, wherein the plurality of nanoparticles comprise a first set of nanoparticles with an average size between 2 nm and 3 nm, a second set of nanoparticles with an average size between 5 nm and 6 nm, and a third set of nanoparticles with an average size between 9 nm and 10 nm; and
electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer;
wherein, when a voltage within a predetermined range is applied to the electrodes at room temperature and ambient pressure conditions, photons with a certain wavelength are emitted by the device and the wavelength of the photons can be varied by varying the applied voltage.